Preparation method of polyvinylidene fluoride with one-dimensional nanowire array structure

A nanowire array, polyvinylidene fluoride technology, applied in microstructure technology, microstructure device, manufacturing microstructure device and other directions, can solve the problems of inconvenient transfer and poor piezoelectric performance, and achieve no inconvenience in transfer and good pressure. The effect of electrical properties

Active Publication Date: 2013-10-02
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing polyvinylidene fluoride with a one-dimensional nanowire array structure, so as to solve the problem of inconvenient transfer and compression caused by directly preparing PVDF nanowire arrays with piezoelectric properties on the working substrate in the prior art. The problem of poor electrical performance

Method used

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  • Preparation method of polyvinylidene fluoride with one-dimensional nanowire array structure
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  • Preparation method of polyvinylidene fluoride with one-dimensional nanowire array structure

Examples

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Effect test

Embodiment 1

[0039] Step 1, prepare the metal electrode layer

[0040] Sputter a layer of SiO with a thickness of 350nm on the surface of a silicon substrate or a glass substrate 1 2 Make an insulating isolation layer 2, and then sputter a metal electrode layer 3 with a thickness of 100 nm on the surface of the insulating isolation layer 2;

[0041] Step 2, prepare polymer solution

[0042]In an environment with a temperature of 20°C, weigh 95% of dimethylformamide and 5% of acetone by volume percentage, and the sum of the volume percentages of the two is 100%. After mixing dimethylformamide and acetone , to prepare a mixed solution a; then dissolve the polyvinylidene fluoride powder or polyvinylidene fluoride copolymer powder in the mixed solution a to prepare a polymer solution, and the volume concentration of the polymer solution is 20 g / L;

[0043] Stir the polymer solution with a magnetic stirrer for 45 minutes, then place the polymer solution in a vacuum for 3 hours, and then seal ...

Embodiment 2

[0051] Step 1, prepare the metal electrode layer

[0052] Sputter a layer of SiO with a thickness of 200nm on the surface of silicon substrate or glass substrate 1 2 Make an insulating isolation layer 2, and then sputter a metal electrode layer 3 with a thickness of 300 nm on the surface of the insulating isolation layer 2;

[0053] Step 2, prepare polymer solution

[0054] In an environment with a temperature of 25°C, weigh 50% dimethylformamide and 5% acetone by volume percentage, and the sum of the volume percentages of the two is 100%. After mixing dimethylformamide and acetone , to prepare a mixed solution a; then dissolve the polyvinylidene fluoride powder or polyvinylidene fluoride copolymer powder in the mixed solution a to prepare a polymer solution, and the volume concentration of the polymer solution is 45 g / L;

[0055] Stir the polymer solution with a magnetic stirrer for 60 minutes, then place the polymer solution in vacuum for 2 hours, and then seal the polymer...

Embodiment 3

[0063] Step 1, prepare the metal electrode layer

[0064] Sputter a layer of SiO with a thickness of 500nm on the surface of a silicon substrate or a glass substrate 1 2 Make an insulating isolation layer 2, and then sputter a metal electrode layer 3 with a thickness of 500 nm on the surface of the insulating isolation layer 2;

[0065] Step 2, prepare polymer solution

[0066] In an environment with a temperature of 15°C, weigh 5% dimethylformamide and 95% acetone by volume percentage, and the sum of the two volume percentages is 100%. After mixing dimethylformamide and acetone , to prepare a mixed solution a; then dissolve the polyvinylidene fluoride powder or polyvinylidene fluoride copolymer powder in the mixed solution a to prepare a polymer solution, and the volume concentration of the polymer solution is 70 g / L;

[0067] Stir the polymer solution with a magnetic stirrer for 30 minutes, then place the polymer solution in a vacuum for 1 hour, and then seal the polymer s...

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Abstract

The invention discloses a preparation method of polyvinylidene fluoride with a one-dimensional nanowire array structure. The preparation method is specifically implemented according to the following steps of: 1. preparation of a metal electrode layer; 2. preparation of a polymer solution; 3. spin coating of a polymer layer; 4. preparation of a polymer precast structure through a metal mould; and 5. stretching the polymer precast structure in an electric field to form a nanowire array. The polyvinylidene fluoride with the one-dimensional nanowire array structure is directly prepared on a substrate so as to avoid the problem of inconvenience in transferring, and the molten polymer rheological stretching is driven by adopting the electric field in a preparation process, so that a material obtains good piezoelectric properties in a structure preparation process. The preparation method can be used for preparing energy harvesters and sensors, and solving the problems of inconvenience in transferring and poor piezoelectric properties caused by directly preparing the PVDF (Polyvinylidene Fluoride) nanowire array with the piezoelectric properties on the working substrate in the prior art.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and relates to a preparation method of polyvinylidene fluoride with a one-dimensional nanowire array structure. Background technique [0002] In recent years, the one-dimensional nanowire array structure has become a research hotspot due to its excellent application potential in optoelectronic devices, sensors, and energy harvesters compared with thin films. There are two approaches to fabricate one-dimensional nanowire arrays: the "top-down" approach and the "bottom-up" approach. Although "top-down" methods, such as optical lithography, electron beam lithography, focused electron beam lithography (FIB), probe (SPM), etc., can achieve the smallest features of hundreds of nanometers to tens of nanometers under certain conditions. Nano array structures are prepared, but the structures prepared by these methods may have many structural defects and crystal defects on the surface of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 安宁丽方长青郭彦峰王权岱张伟刘少龙
Owner XIAN UNIV OF TECH
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