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Silicon carbide semiconductor device and method for manufacturing the same

A semiconductor and silicon carbide technology, applied in the field of silicon carbide semiconductor devices, can solve problems such as increased on-resistance and narrowed current path

Inactive Publication Date: 2013-10-09
DENSO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Although the structure equipped with a p-type deep layer as described in Patent Document 1 is effective for preventing electric field concentration to the gate insulating film, the p-type deep layer narrows the current path and forms between two p-type deep layers adjacent to each other JFET area, resulting in increased on-resistance

Method used

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  • Silicon carbide semiconductor device and method for manufacturing the same
  • Silicon carbide semiconductor device and method for manufacturing the same
  • Silicon carbide semiconductor device and method for manufacturing the same

Examples

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no. 1 example ）

[0059] Next, the first embodiment will be described. Here, an inversion MOSFET having a trench gate structure as an element equipped in a SiC semiconductor device will be introduced.

[0060] figure 1 is a perspective cross-sectional view of a MOSFET having a trench gate structure according to the present embodiment. This figure corresponds to one unit of MOSFET. Although only one cell of the MOSFET is shown in this figure, it has the same figure 1 The structure of the MOSFETs is similar to that of two or more columns of MOSFETs that are arranged adjacent to each other. Figures 2A to 2D Yes figure 1 Cross-sectional view of the MOSFET. Figure 2A With figure 1 The xz plane in is parallel to the sectional view taken along the line IIA-IIA; Figure 2B With figure 1 A cross-sectional view taken parallel to the xz plane and taken along the line IIB-IIB; Figure 2C With figure 1 The yz plane in is parallel and taken along the line IIC-IIC figure 1 cross-sectional view; a...

no. 2 example ）

[0096] Next, the second embodiment will be described. The SiC semiconductor device of the present embodiment differs from the first embodiment in the structure of the p-type deep layer 10 . Since they are similar in basic structure, only the parts different from the first embodiment will be described next.

[0097] Image 6 is a perspective sectional view of the SiC semiconductor device according to the present embodiment. Figure 7A With Image 6 The xz plane in is parallel to the cross-sectional view taken along the line VIIA-VIIA, while Figure 7B With Image 6 The yz plane in is parallel to the cross-sectional view taken along the line VIIB-VIIB.

[0098] like Image 6 , Figure 7A and Figure 7B As shown, also in this embodiment, similar to the first embodiment, the width of each p-type deep layer 10 varies in the depth direction of the p-type deep layer 10, and the width of the upper part of the p-type deep layer 10 is smaller than that of the lower part width. ...

no. 3 example ）

[0101] Next, a third embodiment will be described. Compared with the first embodiment, the SiC semiconductor device of the present embodiment has a structure capable of reducing on-resistance. Since they are similar in basic structure, only the parts different from the first embodiment will be described next.

[0102] Figure 8 is a perspective sectional view of the SiC semiconductor device according to the present embodiment. Figure 9A With Figure 8 The xz plane in is parallel to the cross-sectional view taken along the line IXA-IXA, while Figure 9B With Figure 8 A cross-sectional view taken along the line IXB-IXB parallel to the yz plane in .

[0103] In this example, if Figure 8 as well as Figure 9A and 9B As shown, by adding n - type drift layer 2 on the surface side (i.e., with n + The n-type impurity concentration on the side opposite to the substrate 1) is set high to form the current diffusion layer 2a. The current spreading layer 2a is provided so as ...

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Abstract

A SiC semiconductor device includes: a semiconductor switching element having: a substrate (1), a drift layer (2) and a base region (3) stacked in this order; a source region (4) and a contact region (5) in the base region (3); a trench (6) extending from a surface of the source region (4) to penetrate the base region (3); a gate electrode (9) on a gate insulating film (8) in the trench (6); a source electrode (11) electrically coupled with the source region (4) and the base region (3); a drain electrode (13) on a back side of the substrate (1); and multiple deep layers (10) in an upper portion of the drift layer (2) deeper than the trench (6) and extending in a direction, which crosses the longitudinal direction of the trench. Each deep layer (10) has upper and lower portions (10b, 10a). A width of the upper portion (10b) is smaller than the lower portion (10a).

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2011-27995 filed on February 11, 2011, the disclosure of which is incorporated herein by reference. technical field [0003] The present disclosure relates to a silicon carbide semiconductor device having a trench gate type switching element, and a method for manufacturing the silicon carbide semiconductor device. Background technique [0004] In SiC semiconductor devices, increasing channel density is effective for supplying larger currents. Therefore, a MOSFET having a trench gate structure has been adopted and put into practical use as a silicon transistor. It goes without saying that this trench gate structure can be applied to SiC semiconductor devices. However, serious problems occur when it is applied to SiC. Specifically, SiC has a breakdown field strength ten times that of silicon, and thus a SiC semiconductor device is used when an electric field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/78H01L29/739H01L29/16H01L21/336H01L29/66
CPCH01L29/0634H01L29/1608H01L29/0878H01L29/1095H01L29/7813H01L29/66068H01L29/7397H01L29/66348
Inventor 山本建策登尾正人松木英夫高谷秀史杉本雅裕副岛成雅石川刚渡边行彦
Owner DENSO CORP