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Gate Overvoltage Protection for Compound Semiconductor Transistors

An overvoltage protection device, semiconductor technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as unprotected, limited conventional HEMT applications, and poor HEMT reliability.

Active Publication Date: 2016-07-20
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, HEMTs have poor reliability compared to their silicon counterparts
In particular, the gates of HEMTs are susceptible to overvoltage conditions such as bad circuit layout or ESD (electrostatic discharge) damage
Conventional HEMT gates are not protected against overvoltage conditions
Rather, conventional HEMTs must limit the maximum gate voltage to an extremely low value and rely on good circuit design so that the device does not break down during use, limiting the application of conventional HEMTs

Method used

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  • Gate Overvoltage Protection for Compound Semiconductor Transistors
  • Gate Overvoltage Protection for Compound Semiconductor Transistors
  • Gate Overvoltage Protection for Compound Semiconductor Transistors

Examples

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Embodiment Construction

[0022] Next, an embodiment of a gate overvoltage protection device for a compound semiconductor transistor such as an HFET (Heterojunction Field Effect Transistor) is described. The term HFET is also often referred to as HEMT (High Electron Mobility Transistor), MODFET (Modulation Doped FET) or MESFET (Metal Semiconductor Field Effect Transistor). Herein the terms compound semiconductor field effect transistor, HFET, HEMT, MESFET and MODFET are used interchangeably to denote a field effect transistor that has a junction between two materials of different bandgaps (ie a heterojunction) as a channel. For example, GaAs can be combined with AlGaAs, GaN can be combined with AlGaN, InGaAs can be combined with InAlAs, GaN can be combined with InGaN, and so on. For example, the buffer region may comprise GaN or AlGaN and the barrier region may comprise AlGaN, InAlN, AlN, AlInGaN. Also, the transistor may have an AlInN / AlN / GaN barrier / spacer / buffer layer structure. The term compound ...

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PUM

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Abstract

A transistor device comprising a compound semiconductor body, a drain and a compound disposed on the compound semiconductor body and the semiconductor body through the channel region and the drain electrode are arranged spaced apart source. Provided for controlling the gate channel region. The device further includes a gate transistor overvoltage protection device connected between the source and gate, the gate voltage protection device comprises a p-type and n-type silicon semiconductor material.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to gate overvoltage protection for compound semiconductor transistors. Background technique [0002] Due to favorable electrical properties, especially high breakdown voltage per unit length, GaN is a promising material for power transistors. The most common implementation of GaN-based devices are high electron mobility transistors (HEMTs). However, HEMTs have poor reliability compared to their silicon counterparts. In particular, the gates of HEMTs are susceptible to overvoltage conditions such as bad circuit layout or ESD (electrostatic discharge) damage. Conventional HEMT gates are not protected against overvoltage conditions. Instead, conventional HEMTs must limit the maximum gate voltage to an extremely low value and rely on good circuit design so that the device does not break down during use, limiting the application of conventional HEMTs. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H10N97/00
CPCH01L29/7786H01L29/861H01L29/1608H01L29/2003H01L28/20H01L27/0248H01L29/778H01L29/0653H01L29/0891H01L29/165H01L29/41766H01L29/7787
Inventor G.库拉托拉M.胡茨勒G.波佐维沃M.H.维勒迈耶
Owner INFINEON TECH AUSTRIA AG