Storage medium material, preparation method of storage medium material, and data storage method

Inactive Publication Date: 2013-10-30
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the pitch of the recording points is too close (storage density close to 1Tbit/inch 2 ), the adjacent erasing effect will appear, that is, when a data point is recorded with a high-temperature probe, the original data points around it will be eliminated due to heat radiation or heat conduction
In addition, when erasing and writi...

Method used

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  • Storage medium material, preparation method of storage medium material, and data storage method
  • Storage medium material, preparation method of storage medium material, and data storage method
  • Storage medium material, preparation method of storage medium material, and data storage method

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preparation example Construction

[0024] The preparation method of the storage medium material provided by the invention comprises sequentially forming a polymer layer and a graphite layer on a substrate, and the thickness of the graphite layer is not more than 10 nanometers, preferably 0.35-2 nanometers.

[0025] According to the present invention, the method for forming the polymer layer may be various existing methods, for example, may include coating a solution containing a polymer on a substrate and drying it. Generally speaking, the concentration of the polymer-containing solution can be 1-10% by volume, so that the solution can be more uniformly coated on the substrate. The polymer is used in an amount such that the thickness of the polymer layer is preferably 0.05-1 micron. The method of coating the solution containing the polymer on the substrate is well known to those skilled in the art, for example, methods such as spray coating, spin coating, flow coating, brush coating, and dipping can be used to ...

preparation example 1

[0040] This preparation example is used to illustrate the storage medium material and its preparation method provided by the present invention.

[0041] A silicon wafer with a thickness of 0.3 mm and a nano-level flat surface (purchased from SQI company, full name Silicon Quest International, Inc, the same below) was sequentially soaked in acetone, ethanol and deionized water for 10 minutes, and ultrasonically cleaned for 10 minutes. The frequency is 20kHz and the ultrasonic power is 800W. Spin-coat an acetone solution of polystyrene (Young's modulus 3GPa) with a concentration of 1% by volume on the treated substrate at a rotation speed of 800rpm, and dry at 150°C for 15 minutes to obtain a thickness of 0.05 Micron polymer layer. Use scotch tape to evenly stick the graphite powder, and stick the graphite powder side of the scotch tape to the polymer layer closely, remove the scotch tape, and use Raman spectroscopy to find a thickness of 0.35 nanometers on the polymer layer g...

preparation example 2

[0043] This preparation example is used to illustrate the storage medium material and its preparation method provided by the present invention.

[0044] A silicon nitride wafer (purchased from SQI company, full name Silicon Quest International, Inc) with a thickness of 1 mm and a nano-level flat surface was soaked in acetone, ethanol and deionized water for 10 minutes, and ultrasonic cleaning was performed for 10 minutes. 20KHz, ultrasonic power 800W. Concentration is 10 volume % polymethyl methacrylate (Young's modulus is 4GPa) acetone solution is spin-coated on the treated substrate, the rotating speed of spin-coating is 800rpm, and at 150 ℃, dry 15 minutes, obtain Polymer layer with a thickness of 1 micron. Use scotch tape to evenly stick the graphite powder, and stick the graphite powder side of the scotch tape to the polymer layer closely, remove the scotch tape, and use Raman spectroscopy to find a thickness of 2 nanometers on the polymer layer graphite layer, where, r...

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Abstract

The invention provides a storage medium material, a preparation method of the storage medium material, and a data storage method. The storage medium material comprises a substrate, a polymer layer and a graphite layer which are sequentially laminated, wherein the thickness of the graphite layer is not more than 10 nanometers. When the storage medium material provided by the invention is used for data storage, data with high storage density and high quality can be acquired, the wear to the point of a needle can be effectively reduced, and a polymer material can be prevented from turning outwards.

Description

technical field [0001] The invention relates to a storage medium material, a preparation method thereof and a data storage method. Background technique [0002] With the development of science and technology and the explosive growth of people's demand for information, it has become an inevitable trend for the size of electronic and optical devices to develop to the nanometer level. In recent years, researchers have done a lot of research on micro- and nano-precision processing methods and storage medium materials. Among them, the surface ultra-high density storage technology is mainly based on the maskless processing method of mechanical probes (such as atomic force microprobe ), which can effectively change the surface morphology, crystal structure or optical and electrical properties of a specific storage medium material at the nanoscale, is considered to be one of the powerful means to achieve high-density information storage. Studies have shown that finding a suitable s...

Claims

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Application Information

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IPC IPC(8): G11C13/02
Inventor 王锐王圣楠王小伟裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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