1results about How to "Raise the processing temperature" patented technology

This invention provides a rework method for semiconductor structures with metal layer defects, specifically type I defects within the metal layer. A protective layer is first formed, followed by a heat treatment process to eliminate these type I defects. During the heat treatment, the protective layer protects the metal layer and inhibits the formation of type II defects. This invention performs the heat treatment after the protective layer is formed. The heat treatment temperature is high, and aluminum is easily deformed at high temperatures, leading to type II defects in localized areas. The protective layer, however, is less prone to deformation with increasing temperature; therefore, its deposition inhibits the formation of type II defects in localized areas of the metal layer. The protective layer is a dielectric anti-reflective coating and does not need to be removed after the heat treatment. It is then used to form a photoresist layer for subsequent photolithography processes. This invention eliminates the need for additional steps and reduces the risk of low yield caused by type II defects.