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Memory built-in self-repair system and method based on Hash table

A built-in self-healing and memory technology, applied in static memory, instruments, etc., can solve the problems of memory performance deterioration, low efficiency, and inability to truly repair memory, avoid full search address comparison, and improve the efficiency of redundancy analysis.

Active Publication Date: 2013-11-13
锐立平芯微电子(广州)有限责任公司
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AI Technical Summary

Problems solved by technology

The address comparison efficiency of this full search type is low. When there are many faults, it takes a lot of clock cycles to judge whether the access address is a fault address, which makes the performance of the memory after repair deteriorate to an unacceptable level, and it is impossible to really repair the faults. more memory

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  • Memory built-in self-repair system and method based on Hash table
  • Memory built-in self-repair system and method based on Hash table
  • Memory built-in self-repair system and method based on Hash table

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Embodiment Construction

[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0040]The core idea of ​​the present invention is: the fault address is stored based on the form of a hash table. During the working process of the memory, according to the hash address of the access address, the position of the comparison object in the hash table is directly located and the addresses are compared. If the comparison results are not equal , indicating that there is no fault in the access address, invalidating the redundant storage area, and selecting the data channel of the main storage area; At the same time, the data channel of the redundant storage area is selected, so as to complete the repair of the faulty address.

[0041] figure 1 Shown is the overall block diagram of the memory built-in self-repai...

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Abstract

The invention discloses a memory built-in self-repair (MBISR) system based on Hash table. The system comprises a built-in self-test (BIST) module and a built-in redundancy analysis (BIRA) module. The BIST module is used for carrying out tests on the memory, and temporarily stores tested fault addresses in the BIST module and outputs the fault addresses to the BIRA module; and the BIRA module is used for determining whether an access address is a fault address, and distributing redundancy resource to the fault address and carries out remapping on the fault address, thereby completing repair of the memory. The invention also discloses a memory built-in self-repair method based on Hash table. The invention has high address comparison efficiency, fundamentally solves the disadvantages of a traditional memory built-in self-repair method, such as low search address comparison efficiency and incapability to genuinely repair memory with multiple faults, and has the advantages of small land occupation and low power dissipation.

Description

technical field [0001] The invention relates to hash table storage and memory built-in self-repair (Memory Built-In Self-Repair, MBISR) technical field, in particular to a memory built-in self-repair system and method based on a hash table. Background technique [0002] With the continuous reduction of the size of the integrated circuit process, the density of the memory is increasing, and the number of memory failures is also increasing, which seriously affects the yield of the memory. In order to ensure the yield rate of memory, built-in self-repair technology of memory has emerged as the times require. With its flexible online repair characteristics, low cost and high repair rate and other advantages, it has gradually become an indispensable technical means to improve memory yield. [0003] The core idea of ​​the memory built-in self-repair technology is to replace the detected faulty storage unit with a preset redundant storage unit, so as to achieve the purpose of repai...

Claims

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Application Information

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IPC IPC(8): G11C29/12G11C29/18
Inventor 郭旭峰于芳
Owner 锐立平芯微电子(广州)有限责任公司
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