Unlock instant, AI-driven research and patent intelligence for your innovation.

Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace

A technology of lifting mechanism and ingot casting furnace, which is applied in the directions of single crystal growth, crystal growth, polycrystalline material growth, etc., can solve the problems that cannot meet the process requirements, and achieve the effect of reasonable structure and meeting process requirements

Active Publication Date: 2013-11-27
安徽省徽商金属股份有限公司
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure can meet the process requirements for the polysilicon ingot furnace, but because the original polysilicon ingot furnace has no lower heating element, it cannot meet the process requirements in the quasi-monocrystalline silicon ingot furnace

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace
  • Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The present invention will be further described in detail below in conjunction with the embodiments and the drawings:

[0012] see figure 1 , figure 2 , A lower heater lifting mechanism of a quasi-single crystal ingot furnace, comprising a lower heating element 4, a fixing member 2, an electrode column 5, a fixing plate 11, a cushion block 10, a supporting plate 9, a lifting device 7, and a transmission flexible shaft 12 And motor 8.

[0013] Such as figure 1 , figure 2 As shown, the lower heating body 4 is installed on the bottom surface of the crucible platform 3 inside the heat preservation body 6 through the fixing member 2; the lower heating body 4 is installed with a vertical electrode column 5, which extends downwards from the heat preservation body 6 and the furnace The body 1 is installed on the fixed plate 11, and the fixed plate 11 is connected to the supporting plate 9 through an insulating backing plate 10; a lifting device 7 is fixed under the furnace body ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a lower heater lifting mechanism of a pseudo-single crystal silicon ingot furnace, which is characterized by comprising a lower heating body, fixing pieces, electrode columns, a fixing plate, cushion blocks, a supporting plate, lifting devices, a flexible transmission shaft and a motor, wherein the lower heating body is mounted on the bottom surface of a crucible platform in a thermal insulator through the fixing pieces; the electrode columns are vertically mounted on the lower heating body, downwards extend out of the thermal insulator and a furnace body, and then are mounted on the fixing plate; the fixing plate is connected with the supporting plate through the insulating cushion blocks; the lifting devices are fixedly arranged below the furnace body, and are connected with the supporting plate; the flexible transmission shaft and the motor are arranged on the supporting plate; the lifting devices are connected with and driven by the flexible transmission shaft, and the flexible transmission shaft is connected with and driven by the motor. The lower heater lifting mechanism has a reasonable structure, the lower heating body is enabled to move up and down in the thermal insulator of the ingot furnace, and the process requirement in the quasi-single crystal silicon ingot production process is met.

Description

Technical field [0001] The invention belongs to the technical field of quasi-single crystal ingot furnaces, and particularly relates to a lower heater lifting mechanism of an ingot furnace. Background technique [0002] Quasi-single crystal is a quasi-single crystal silicon wafer with high conversion rate produced by a series of advanced technological processes by casting crystallization on a polysilicon ingot furnace. The main process is to place the seed crystal on the bottom of the quartz crucible of the polysilicon ingot furnace, and use precise segmented temperature control under vacuum to ensure that the seed crystal is partially melted when the silicon material melts, thereby growing a single crystal. At present, domestic polysilicon ingot casting furnaces are mainly crucible and platform stationary, and the upper heating element, side heating element and upper heat preservation body move up and down. This structure can meet the process requirements for the polysilicon in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B28/06
Inventor 水川许柏
Owner 安徽省徽商金属股份有限公司