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Crucible platform lifting mechanism of pseudo-single crystal silicon ingot furnace

A platform lifting and ingot furnace technology, which is applied in the directions of crystal growth, polycrystalline material growth, chemical instruments and methods, etc., can solve problems such as inability to meet process requirements, and achieve the effect of reasonable structure and satisfying process requirements.

Inactive Publication Date: 2013-11-27
安徽大晟新能源设备科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure can meet the process requirements for polysilicon ingot furnaces, but it cannot meet the process requirements for quasi-monocrystalline silicon ingot furnaces.

Method used

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  • Crucible platform lifting mechanism of pseudo-single crystal silicon ingot furnace
  • Crucible platform lifting mechanism of pseudo-single crystal silicon ingot furnace

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Experimental program
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Embodiment Construction

[0012] Below in conjunction with embodiment and accompanying drawing thereof, the present invention is described in further detail:

[0013] See figure 1 , figure 2 , a crucible platform lifting mechanism for a quasi-single crystal ingot casting furnace, comprising a crucible platform 3, a graphite column 4, a steel column 6, a supporting plate 9, a lifting device 7, a flexible transmission shaft 10, and a motor 8.

[0014] Such as figure 1 , figure 2 As shown, the bottom surface of the crucible platform 3 inside the upper insulation body 2 and the lower insulation body 5 is provided with three graphite columns 4, the graphite columns 4 protrude downwards and connect with the steel column 6 outside the lower insulation body 5, and the steel column 6 is downward After protruding out of the furnace body 1, it is fixedly connected with the supporting plate 9 arranged horizontally. Three lifting devices 7 are fixed under the furnace body 1. The screw of the lifting device 7 i...

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PUM

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Abstract

The invention relates to a crucible platform lifting mechanism of a pseudo-single crystal silicon ingot furnace, which comprises a crucible platform, a graphite column, a steel column, a supporting plate, a lifting device, a flexible transmission shaft and a motor, wherein the graphite column is arranged on the bottom surface of the crucible platform, downwards extends out of a lower thermal insulator, and then is connected with the steel column; after downwards extending out of a furnace body, the steel column is fixedly connected with the supporting plate horizontally arranged; the lifting device is fixedly arranged below the furnace body, and is connected with the supporting plate; the flexible transmission shaft and the motor are arranged on the supporting plate; the lifting device is connected with and driven by the flexible transmission shaft; the flexible transmission shaft is connected with and driven by the motor. The crucible platform lifting mechanism has a reasonable structure, the crucible platform is enabled to move up and down in the thermal insulator of the ingot furnace, and the process requirement in the quasi-single crystal silicon ingot production process is met.

Description

technical field [0001] The invention belongs to the technical field of quasi-single crystal ingot casting furnaces, in particular to a lifting mechanism for a crucible platform in an ingot casting furnace. Background technique [0002] Quasi-single crystal is a quasi-single crystal silicon wafer with high conversion rate produced by casting and crystallizing in a polysilicon ingot furnace through a series of advanced technological processes. The main process is to place the seed crystal at the bottom of the quartz crucible in the quasi-single crystal furnace, and adopt precise segmental temperature control in a vacuum state to ensure that the seed crystal is partially melted when the silicon material is melted, thereby growing a single crystal. At present, the domestic polysilicon ingot furnace mainly has a GT structure, in which the crucible and platform do not move, and the upper heating element, side heating element and upper insulating body move up and down. This struct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/04
Inventor 水川许柏
Owner 安徽大晟新能源设备科技有限公司