Lower Heater Lifting Mechanism of Quasi-single Crystal Ingot Casting Furnace
A lifting mechanism and an ingot furnace technology, applied in the directions of single crystal growth, crystal growth, polycrystalline material growth, etc., can solve the problems such as the inability to meet process requirements, and achieve the effect of reasonable structure and satisfying process requirements.
Active Publication Date: 2016-02-03
安徽省徽商金属股份有限公司
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Problems solved by technology
This structure can meet the process requirements for the polysilicon ingot furnace, but because the original polysilicon ingot furnace has no lower heating element, it cannot meet the process requirements in the quasi-monocrystalline silicon ingot furnace
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Embodiment Construction
[0011] Below in conjunction with embodiment and accompanying drawing thereof, the present invention is described in further detail:
[0012] See figure 1 , figure 2 , a lower heater lifting mechanism for a quasi-single crystal ingot casting furnace, comprising a lower heating element 4, a fixing piece 2, an electrode column 5, a fixing plate 11, a spacer 10, a supporting plate 9, a lifting device 7, and a transmission flexible shaft 12 and motor 8.
[0013] Such as figure 1 , figure 2 As shown, the lower heating body 4 is installed on the bottom surface of the crucible platform 3 inside the heat insulating body 6 through the fixing part 2; After the body 1 is installed on the fixed plate 11, the fixed plate 11 is connected with the supporting plate 9 through the insulating backing plate 10; a lifting device 7 is fixed under the furnace body 1, and the lifting device 7 is connected with the supporting plate 9; Transmission flexible shaft 12 and motor 8, lifting device 7 ...
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The invention relates to a lower heater lifting mechanism of a pseudo-single crystal silicon ingot furnace, which is characterized by comprising a lower heating body, fixing pieces, electrode columns, a fixing plate, cushion blocks, a supporting plate, lifting devices, a flexible transmission shaft and a motor, wherein the lower heating body is mounted on the bottom surface of a crucible platform in a thermal insulator through the fixing pieces; the electrode columns are vertically mounted on the lower heating body, downwards extend out of the thermal insulator and a furnace body, and then are mounted on the fixing plate; the fixing plate is connected with the supporting plate through the insulating cushion blocks; the lifting devices are fixedly arranged below the furnace body, and are connected with the supporting plate; the flexible transmission shaft and the motor are arranged on the supporting plate; the lifting devices are connected with and driven by the flexible transmission shaft, and the flexible transmission shaft is connected with and driven by the motor. The lower heater lifting mechanism has a reasonable structure, the lower heating body is enabled to move up and down in the thermal insulator of the ingot furnace, and the process requirement in the quasi-single crystal silicon ingot production process is met.
Description
technical field [0001] The invention belongs to the technical field of quasi-single crystal ingot casting furnaces, in particular to a lifting mechanism for middle and lower heaters in an ingot casting furnace. Background technique [0002] Quasi-single crystal is a quasi-single crystal silicon wafer with high conversion rate produced by casting and crystallizing in a polysilicon ingot furnace through a series of advanced technological processes. The main process is to place the seed crystal at the bottom of the quartz crucible of the polysilicon ingot furnace, and in a vacuum state, adopt precise segmental temperature control to ensure that the seed crystal is partially melted when the silicon material is melted, thereby growing a single crystal. At present, the domestic polysilicon ingot casting furnace mainly has a crucible and a fixed platform, and the upper heating element, the side heating element and the upper insulating body move up and down. This structure can meet...
Claims
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IPC IPC(8): C30B11/00C30B28/06
Inventor 水川许柏
Owner 安徽省徽商金属股份有限公司