Topological insulator flexible transparent conductive material and its preparation method and application
A technology of topological insulators, nanomaterials, applied in conductive layers on insulating carriers, cable/conductor manufacturing, nanotechnology for materials and surface science, etc. , to achieve the effect of high electrical conductivity, excellent mechanical properties and high light transmittance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0080] Example 1: Preparation of a flexible transparent conductive film with a regular network structure of topological insulators
[0081] 1) Fluorphlogopite KMg with a clean surface and a thickness of 30 μm was obtained by mechanical exfoliation 3 (AlSi 3 0 10 )F 2 ,by figure 1 The square carbon-free copper mesh shown is the mask plate (the aperture size is 160 × 160 μm, and the rib width is 30 μm. The dark area is covered with Bi 2 Se 3 film with a network structure, the light-colored part is the fluorine phlogopite substrate), plasma etching was carried out in the air atmosphere, the etching power was 90W, and the time was 15min to obtain a patterned fluorine phlogopite substrate;
[0082] The structure of the carbon-free copper mesh is as follows figure 1 As shown in No. 2, the specification is 1.2cm×1.2cm, mesh ( figure 1 No. 3) The side lengths are 50μm, 60μm, 90μm, and 160μm in four specifications, and the rib width ( figure 1 No. 4) are all 30μm;
[0083] 2) ...
Embodiment 2
[0115] Example 2: Preparation of topological insulator random network structure flexible transparent conductive film
[0116] 1) Add 5 μL of poly-L-lysine solution with a ratio of 0.1 g:1000 mL of poly-L-lysine to water to 1 mL of Au sol with a diameter of 20 nm and mix well, then add drop-wise to clean Si (100 ) on the base, make it dry naturally, and complete the functional modification of the base;
[0117] 2) Set Bi 2 Te 3 Block crystals (produced by AlfaAesar, with a purity of 99.999%) were ground into powder as a volatilization source and placed in the middle of the quartz tube, that is, in the middle of the gas flow direction. The functionally modified substrate obtained in step 1) was placed below the gas flow direction and 11cm away from the volatilization source- 15cm, and then place the quartz tube in the tube furnace;
[0118] Start the vacuum pump, pump the quartz tube to a base pressure of 100mTorr (1Torr=1mmHg=133.3Pa), turn off the vacuum pump and open the g...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


