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A kind of texturing method of polycrystalline silicon chip

A polycrystalline silicon wafer and texturing technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of large differences in reaction rates, increased surface reflectivity of silicon wafers, and decreased reflectivity of silicon wafers. Effect of Performance Parameters and Conversion Efficiency

Active Publication Date: 2018-08-10
上饶捷泰新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Texture made by acid etching has a limited reduction in the reflectivity of silicon wafers (from 30% to about 27%), and since there are multiple crystal orientations on polysilicon wafers, if alkali etching is used directly to make texturing, each crystal There is a large difference in the reaction rate of the silicon wafer, resulting in an increase in the reflectivity of the silicon wafer surface

Method used

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  • A kind of texturing method of polycrystalline silicon chip
  • A kind of texturing method of polycrystalline silicon chip

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Embodiment 1

[0011] A kind of texturing method of polycrystalline silicon chip, polycrystalline silicon chip is that the temperature is 4 ℃ HF and HNO 3 The mixed acid solution was etched for 1min, and the etching amount of each polysilicon wafer was controlled at 0.35g; then the acid-etched polysilicon wafer was placed in an alkali etching solution at a temperature of 40°C for 3 minutes, and the etching amount of each polysilicon wafer was controlled at 0.05g, Instantly.

[0012] HF and HNO 3 The mass concentration of HF in the mixed acid solution is 6%, HNO 3 The mass concentration is 35%.

[0013] The alkali corrosion solution is an aqueous solution of NaOH or KOH and a texturing additive, wherein the mass concentration of NaOH or KOH is 0.1%, and the mass concentration of the texturing additive is 0.1%.

[0014] The texturing additive consists of the following parts by mass: 82.0 parts of water, 0.4 parts of sodium benzoate, 0.2 parts of sodium acetate, 3.0 parts of sodium citrate, ...

Embodiment 2

[0016] A kind of texturing method of polycrystalline silicon chip, polycrystalline silicon chip is that the temperature is 7 ℃ HF and HNO 3 The mixed acid solution is etched for 1.5min, and the etching amount of each polysilicon wafer is controlled at 0.40g; then the acid-etched polysilicon wafer is placed in an alkali etching solution at a temperature of 50°C for 4 minutes, and the etching amount of each polysilicon wafer is controlled at 0.08g , that is.

[0017] HF and HNO 3 The mass concentration of HF in the mixed acid solution is 7%, HNO 3 The mass concentration is 37%.

[0018] The alkaline corrosion solution is an aqueous solution of NaOH or KOH and a texturing additive, wherein the mass concentration of NaOH or KOH is 0.3%, and the mass concentration of the texturing additive is 0.2%.

[0019] The texturing additive consists of the following parts by mass: 84.0 parts of water, 0.6 parts of sodium benzoate, 0.3 parts of sodium acetate, 4.0 parts of sodium citrate, 1...

Embodiment 3

[0021] A kind of texturing method of polycrystalline silicon chip, polycrystalline silicon chip is that the temperature is 10 ℃ HF and HNO 3 The mixed acid solution was etched for 2 minutes, and the etching amount of each polysilicon wafer was controlled at 0.45 g; then the acid-etched polysilicon wafer was placed in an alkali etching solution at a temperature of 60 ° C for 5 minutes, and the etching amount of each polysilicon wafer was controlled at 0.1 g. Instantly.

[0022] HF and HNO 3 The mass concentration of HF in the mixed acid solution is 8%, HNO 3 The mass concentration is 40%.

[0023] The alkali corrosion solution is an aqueous solution of NaOH or KOH and a texturing additive, wherein the mass concentration of NaOH or KOH is 0.5%, and the mass concentration of the texturing additive is 0.3%.

[0024] The texturing additive consists of the following parts by mass: 86.0 parts of water, 0.8 parts of sodium benzoate, 0.4 parts of sodium acetate, 5.0 parts of sodium ...

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Abstract

The invention discloses a texture surface making method of polycrystalline silicon wafers. Firstly, the polycrystalline silicon wafers are subjected to the texture surface making process in an acid corrosion mode to form corrosion pits in the surfaces of polycrystalline silicon wafers, secondly, the polycrystalline silicon wafers are subjected to the texture surface making process in an alkali corrosion mode, the shapes of pyramids are corroded in the pits formed in the acid corrosion, and therefore the reflectivity of polycrystalline battery pieces can be lowered, and the performance parameters and conversion efficiency of electricity of monocrystal solar batteries also can be improved.

Description

technical field [0001] The invention relates to a method for making texture of a polycrystalline silicon wafer, belonging to the field of crystalline silicon solar cells. Background technique [0002] At present, texturing is a method for preparing a silicon surface with the function of reducing reflection. The surface of a crystalline silicon wafer is textured, and the light trapping effect of the surface is used to promote the absorption of sunlight and improve the conversion efficiency of polycrystalline solar cells. In the production process of polycrystalline silicon solar cells, acid etching (HF+HNO3) is generally used for texturing, and monocrystalline silicon solar cells are generally made of alkali etching (NaOH / KOH+texturing additives). [0003] Texture made by acid etching has a limited reduction in the reflectivity of silicon wafers (from 30% to about 27%), and since there are multiple crystal orientations on polysilicon wafers, if alkali etching is used directly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306
Inventor 柳杉黄治国王鹏梁晓静梅超包兵兵
Owner 上饶捷泰新能源科技有限公司
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