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Resist stripping agent

A technology of stripping agent and corrosion inhibitor, applied in the direction of photosensitive material processing, etc., can solve the problem of reducing the stripping effect of photoresist film, and achieve the effect of excellent resist film stripping.

Inactive Publication Date: 2013-12-04
杨桂望
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, pointed out the appropriate amount of anti-corrosion agent, and if it exceeds the appropriate amount, the stripping effect of the photoresist film will be reduced

Method used

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  • Resist stripping agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The preparation of embodiment 1 corrosion inhibitor

[0029] Mix 50 g of hexamethylenetetramine, 40 g of 1,4-butynediol, 3 g of sodium dodecylbenzenesulfonate, 2 g of imidazole, and 405 g of water, and stir for 5 hours to obtain a corrosion inhibitor.

Embodiment 2

[0030] Embodiment 2 Release agent 1

[0031] Mix 35g of monoethanolamine, 60g of diethylene glycol monomethyl ether, 15g of N,N-dimethylacetamide, 25g of the corrosion inhibitor prepared in Example 1, and 25g of water, and stir evenly to obtain stripper 1.

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Abstract

The invention provides a photoinduced resist stripping agent composition which comprises organic amine, diethylene glycol monoalkyl ether, an aprotic polar solvent N, N-dimethylacetamide, a preservative and water. The resist stripping agent does not corrode metal wiring during the process of stripping resist films used for electronic circuit layout or metal wiring of display elements, and has excellent resist film strippability.

Description

technical field [0001] The invention relates to the technical field of resist cleaning, in particular to a stripper composition for removing resist films used in photolithography. Background technique [0002] Generally, the photoresist film is an essential substance in the photolithography process, and the photolithography process is generally applied to integrated circuits (integrated circuit, IC), large scale integration (large scale integration, LSI), ultra-large Manufacture of semiconductor devices such as very large scale integration (VLSI) and image display devices such as liquid crystal displays and flat panel displays. For example, in a semiconductor device, a photoresist film is formed on an inorganic substrate such as a silicon chip, and a photoresist pattern is formed by exposing the photoresist film layer using a mask and then developing. After the photoresist pattern is etched and diffused, the photoresist pattern film is peeled off from the inorganic substrat...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 杨桂望
Owner 杨桂望