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Resist stripping agent

A stripping agent and photoresist technology, which is applied in the processing of photosensitive materials, etc., can solve the problems such as the reduction of photoresist film stripping effect, and achieve the effect of excellent resist film stripping

Inactive Publication Date: 2013-12-04
杨桂望
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, pointed out the appropriate amount of anti-corrosion agent, and if it exceeds the appropriate amount, the stripping effect of the photoresist film will be reduced

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The preparation of embodiment 1 chlorinated 1-hydroxyethyl-3-hexadecyl imidazole

[0028]1.79 mL of imidazole and 3.8 mL of bromohexadecane (substance ratio of 2:1) were mixed in 35 mL of ethyl acetate, and the mixture was uniformly mixed by magnetic stirring for 10 minutes. Pour the mixture into a 60mL PTFE liner, seal the PTFE liner into a stainless steel reaction kettle, and put it into a digital oven, heat it from room temperature to 120 °C for 16 hours, and then cool it naturally. to room temperature. Then the mixture was filtered to take out the filtrate, washed with distilled water several times to remove imidazole that did not participate in the reaction, and the solvent ethyl acetate was evaporated with a rotary evaporator. hours to constant weight. A pale yellow liquid was obtained, the product was weighed, 2.9 g of 1-hexadecyl imidazole and 1 ml of 2-chloroethanol (the mass ratio of substances was 1:1.2) were mixed in 35 ml of ethyl acetate, and the magneti...

Embodiment 2

[0029] Example 2 Release agent 1

[0030] Mix 35g of monoethanolamine, 60g of diethylene glycol monomethyl ether, 15g of N,N-dimethylacetamide, 15g of 1-hydroxyethyl-3-hexadecylimidazole chloride as a preservative, and 25g of water, and stir. uniform, that is, release agent 1 is obtained.

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Abstract

The invention provides a photoinduced resist stripping agent composition which comprises organic amine, diethylene glycol monoalkyl ether, an aprotic polar solvent N, N-dimethylacetamide, a preservative and water. The resist stripping agent does not corrode metal wiring during the process of stripping resist films used for electronic circuit layout or metal wiring of display elements, and has excellent resist film strippability.

Description

technical field [0001] The present invention relates to the technical field of resist cleaning, in particular to a stripper composition for removing resist films used in photolithography. Background technique [0002] Generally, a photoresist film is an indispensable substance in the photolithography process, and the photolithography process is generally used in integrated circuits (IC), large scale integration (LSI), ultra-large Manufacture of semiconductor devices such as very large scale integration (VLSI) and image display devices such as liquid crystal displays and flat panel displays. For example, in a semiconductor device, a photoresist film is formed on an inorganic substrate such as a silicon chip, and the photoresist film layer is exposed to light using a mask, and then developed to form a photoresist pattern. After etching and diffusing the photoresist pattern, the photoresist pattern film is peeled and removed from the inorganic substrate to produce a semiconduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 杨桂望
Owner 杨桂望