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Resist film remover

A technology of resist film and stripper, applied in the direction of organic chemistry, photosensitive material processing, etc., can solve the problems of easy change of composition and corrosion of metal wiring, etc., and achieve the effect of excellent resist film stripping.

Inactive Publication Date: 2014-01-29
杨桂望
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the primary or secondary amines have the disadvantages that the composition is easily changed due to the low boiling point, and the weight and composition change after a period of time due to volatilization, thus bringing the inconvenience of needing to replace the entire stripping solution during the process
In addition, when the primary or secondary amine does not contain a corrosion inhibitor, metal wiring can be severely corroded even if mixed with a small amount of water

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The preparation of embodiment 1 chloride 1-hydroxyethyl-3-hexadecyl imidazole

[0035]Mix 1.79 g of imidazole and 3.8 mL of hexadecane bromide (the molar ratio of substances is 2:1) in 35 mL of ethyl acetate, stir for 10 minutes with magnetic force and mix well. Pour the mixture into a polytetrafluoroethylene liner with a capacity of 60mL, seal the polytetrafluoroethylene liner into a stainless steel reactor, and put it into a digital oven, heat it from room temperature to 120°C for 16 hours, and then cool it naturally to room temperature. Then the mixture was filtered to take out the filtrate, washed several times with distilled water to remove the imidazole that did not participate in the reaction, and the solvent ethyl acetate was evaporated with a rotary evaporator, and the resulting product 1-hexadecyl imidazole was dried in a vacuum oven at 70°C for 12 hours to constant weight. Obtain pale yellow liquid, weigh the product, mix 2.9g of 1-hexadecyl imidazole and 1...

Embodiment 2

[0036] Embodiment 2ω, the preparation of ω '-two (benzimidazol-2-yl) alkanes

[0037] Weigh 0.11 mol of o-phenylenediamine and 0.05 mol of fatty diacid respectively, thoroughly grind them in a mortar to make them evenly mixed, and transfer them to a three-necked flask. Add mixed acid, pass through nitrogen, and heat to reflux under mechanical stirring. TLC tracking and monitoring until the end of the reaction, about 10h, pour it into a 250mL beaker, let it stand for cooling, and adjust the pH=7 with concentrated ammonia water. Stand overnight at 4°C, filter and dry with suction, and recrystallize the crude product with methanol / water to obtain a pure product.

Embodiment 3

[0039] With N-ethyl ethyl carbamate 25g, ethylene glycol monobutyl ether 8g, gallic acid 4g, organic solvent and the chloride 1-hydroxyethyl-3-hexadecylimidazole 4g ​​that embodiment 1 prepares, embodiment 2. Mix and stir 4 g of the prepared ω,ω′-bis(benzimidazol-2-yl)alkane until clear to obtain a release agent.

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Abstract

The invention provides a novel resist film remover, comprising ethyl N-ethylcarbamate, ethylene glycol monobutyl ether, gallic acid, an organic solvent and an anticorrosive agent. In the process of removing a resist film for the layout of an electronic circuit or display element metal wiring, the resist film remover does not corrode the metal wiring, and in particular does not corrode metals such as aluminum, molybdenum, copper and titanium; the resist film remover is a resist film remover composition with excellent resist film removing performance.

Description

technical field [0001] The present invention relates to a stripping agent composition for removing a resist film (resist) used in photolithography (photo-lithography), and more particularly to a stripper composition that can reduce the impact on metal wiring when removing a resist film for patterning metal wiring. corrosion, and can achieve an excellent stripping effect of the resist film stripper composition. Background technique [0002] Usually, resist film (photoresist film, photo-resist) is an essential substance in photolithography process, and photolithography process is generally applied to integrated circuit (integrated circuit, IC), large-scale integrated circuit Manufacturing of semiconductor devices such as large scale integration (LSI) and very large scale integration (VLSI) and image display devices such as liquid crystal displays and flat panel displays [0003] However, after performing a photo-lithography process, the resist film is removed by a stripping s...

Claims

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Application Information

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IPC IPC(8): G03F7/42C07D235/20
Inventor 杨桂望
Owner 杨桂望