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A kind of erasing and writing method of non-volatile memory and erasing and writing device

A non-volatile, memory technology, applied in the field of memory, can solve the problem of wasting a lot of time, and achieve the effect of reducing erasing operations, saving erasing time, and improving programming speed

Active Publication Date: 2016-12-14
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in this application is to provide a non-volatile memory erasing method and erasing device, to solve the existing programming method, when the amount of data modification is small, unnecessary erasing operations waste a lot of time question

Method used

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  • A kind of erasing and writing method of non-volatile memory and erasing and writing device
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  • A kind of erasing and writing method of non-volatile memory and erasing and writing device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Embodiment 1 introduces in detail a method for erasing and writing a non-volatile memory proposed in this application.

[0046] refer to figure 1 , shows a flowchart of a method for erasing and writing a non-volatile memory according to Embodiment 1 of the present application.

[0047] Step 11, select the working mode, the working mode includes erasing mode, programming mode and erasing and writing mode;

[0048] The erasing and writing method of the non-volatile memory in this embodiment includes three working modes, namely erasing mode, programming mode and erasing and writing mode.

[0049] Wherein, the erasing mode includes an erasing operation on the target storage block;

[0050] The programming mode includes programming operations on the target memory block;

[0051] The erasing and writing mode includes determining, verifying, erasing and programming operations on the target memory block.

[0052] If only the memory block is erased, select the erase mode;

...

Embodiment 2

[0073] Embodiment 2 introduces in detail a method for erasing and writing a non-volatile memory proposed in this application.

[0074] refer to figure 2 , which shows a flowchart of a method for erasing and writing a non-volatile memory according to Embodiment 2 of the present application.

[0075] Step 21, select a working mode, the working mode includes erasing mode, programming mode and erasing and writing mode;

[0076] If only erasing the storage block or storage area, select the erasing mode;

[0077] For example, if the erasing operation is only performed on memory blocks 1-10 in the non-volatile memory, the erasing mode is selected.

[0078] If only programming operations are performed on the storage block or storage area, select the programming mode;

[0079] For example, if the programming operation is only performed on memory blocks No. 11-20 in the non-volatile memory, the programming mode is selected.

[0080] If the erasing and writing operation is performed...

Embodiment 3

[0101] Embodiment 3 introduces in detail a method for erasing and writing a non-volatile memory proposed in this application.

[0102] refer to image 3 , which shows a schematic diagram of selecting an operating mode in a method for erasing and writing a non-volatile memory according to Embodiment 3 of the present application.

[0103] When erasing and writing non-volatile memory, choose among three working modes according to actual needs;

[0104] If only the erase operation is performed on the storage block or the storage area, select the erase mode 31;

[0105] If only the programming operation is performed on the storage block or the storage area, select the programming mode 32;

[0106] If the erasing and writing operation is performed on the storage block or storage area, and the data involved in the erasing and writing operation changes greatly, first select the erasing mode 31, and then select the programming mode 32;

[0107] If the erasing and writing operation i...

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Abstract

The invention provides an erasing method and an erasing device for a nonvolatile memory. The erasing method and the erasing device for the nonvolatile memory are used for solving the problems that according to an existing programming manner, when a data modifying amount is quite small, unnecessary wiping operation is performed, and a large amount of time is consumed. The erasing method for the nonvolatile memory includes the steps that a working mode is selected from a wiping mode, a programming mode and an erasing mode. When the erasing mode is selected, target storage blocks to be erased are determined, and the following operation is performed on the target storage blocks, wherein the operation includes the steps that whether the target storage blocks need to be programmed or not is verified; block erasing is performed on the target storage blocks needing programming; block programming is performed on the target storage blocks which undergo block wiping; whether all the target storage blocks are programmed or not is judged, if yes, programming is completed, programming is finished, and if programming is not completed, the next target storage block is determined to undergo verification, block erasing and block programming. According to the erasing method and the erasing device for the nonvolatile memory, flexible working modes can be provided according to different requirements, due to the erasing mode, unnecessary wiping operation is avoided, the wiping time is saved, and the programming speed is improved.

Description

technical field [0001] The present application relates to the technical field of memory, in particular to a method and device for erasing and rewriting a non-volatile memory. Background technique [0002] Non-volatile memory (Non-volatile Memory) has the advantages of multiple reading, erasing, programming and other actions of data, and the stored data will not disappear after power off, so non-volatile memory Sexual memory is widely used in personal computers and electronic devices, among others. [0003] At present, the general non-volatile memory needs to be erased before the programming operation, and the current non-volatile memory basically separates the programming and erasing operations, which requires the user to perform the erasing operation before programming. remove. Thus, the actual programming time includes the erasing time. The erasing of the non-volatile memory is relatively time-consuming, which leads to relatively long programming time of the non-volatil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G11C16/34
Inventor 付永庆
Owner GIGADEVICE SEMICON (BEIJING) INC