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Metal gate finFET device and method of fabricating same

A metal gate, metal technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as device performance degradation

Active Publication Date: 2013-12-04
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there are still challenges in providing proper stress and / or gate resistance in devices such as metal gate finFETs
For example, low stress on the gate and / or high gate resistance can cause degraded device performance

Method used

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  • Metal gate finFET device and method of fabricating same
  • Metal gate finFET device and method of fabricating same
  • Metal gate finFET device and method of fabricating same

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Embodiment Construction

[0033] It is understood that in order to implement the different components of the present invention, the following disclosure provides many different embodiments or examples. Specific examples of elements and arrangements are described below to simplify the invention. Of course these are just examples and are not intended to be used for limitation. Moreover, in the following description, the formation of the first member above or on the second member may include an embodiment in which the first and second members are formed in direct contact, and may also include an embodiment in which the An additional component between the one and the second component, so that the first and second component may not directly contact the embodiment. For conciseness and clarity, various parts can be drawn in different scales at will.

[0034] It may also be noted that the present invention shows embodiments in the form of multi-gate transistors or fin-type multi-gate transistors (referred to he...

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Abstract

A method and device including a substrate having a fin. A metal gate structure is formed on the fin. The metal gate structure includes a stress metal layer formed on the fin such that the stress metal layer extends to a first height from an STI feature, the first height being greater than the fin height. A conduction metal layer is formed on the stress metal layer.

Description

Technical field [0001] The present invention relates to semiconductor manufacturing, in particular to a metal gate finFET device and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced multiple generations of ICs, each of which has smaller and more complex circuits than the previous generation. In the course of IC development, functional density (that is, the number of interconnected devices per chip area) has generally increased while geometric size (that is, the smallest component (or line) that can be made using manufacturing processes) has decreased. Usually this scaling down process brings benefits by increasing production efficiency and reducing related costs. This scaled-down process has also increased the complexity of processing and manufacturing ICs, and in order to achieve these advances, similar developments...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/49
CPCH01L21/28H01L29/78H01L29/49H01L29/66545H01L29/66795H01L29/7845H01L27/0886H01L29/0649
Inventor 杨玉麟彭辞修叶致锴赖理学
Owner TAIWAN SEMICON MFG CO LTD