Nitrogen content measurement method of ultra-thin gate silicon oxynitride film

Abstract

The invention relates to a method for measuring the nitrogen content of an ultra-thin gate SiON film. The method is used for measuring a semiconductor structure, wherein the ultra-thin gate SiON film is formed on a silicon substrate of the semiconductor structure. According to the method, through reoxidation treatment on the semiconductor structure and according to the increment of the thickness of the film before reoxidation treatment is carried out on the semiconductor structure and the thickness of the film after reoxidation treatment is carried out on the semiconductor structure, the nitrogen content, corresponding to the thickness increment, in the SiON film can be obtained by calculation. The detection structure is more visualized; damage to a silicon wafer to be detected can be avoided; the measurement can be achieved through traditional thickness measurement tools, external expensive detection devices are not needed, and therefore detection cost can be saved; besides, detection time can be effectively shortened.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for measuring the nitrogen content of an ultra-thin gate silicon oxynitride film. Background technique [0002] In order to manufacture an ultra-thin gate silicon oxynitride (Ultra-thin Gate SiON) film, it is generally necessary to first generate ultra-thin gate oxide (Ultra-thin Gate Oxide) SiO on a silicon substrate (Si) 2 film( figure 1 ), then enter the nitriding process using N 2 O / NO nitrogen source gas is annealed, so that the silicon substrate (Si) and SiO 2 Nitrogen atoms are introduced into the interface of the film to bond with silicon atoms to form a nitrogen-containing layer. The general semiconductor industry regards nitrogen-containing SiO 2 Commonly known as silicon oxynitride SION, that is to say, the SiO obtained at the gate position according to the above process 2 The film and the nitrogen-containing layer are the required ultra-thin gate silicon ox...

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Problems solved by technology

[0003] However, if the nitrogen content in the formed SiON thin film is to be measured, the current method is to send the product to an external testing institution and use instruments such as SIMS (secondary ion mass spectrometer) or XPS (X photoelectron spectrometer) for detection , not only needs to destroy the silicon wafers sent for inspection, but also has the disadvantages of long inspection time (about 2-7 days) and high cost

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