Secondary anvil and secondary pressurizing unit of octahedral pressure cavity static high-pressure device

A high-pressure device and octahedron technology, which is applied in the field of pressure devices, can solve problems such as damage to the static high-pressure device of the octahedral pressure chamber, and achieve the effects of reducing the probability of firing, increasing the maximum pressure, and enhancing the pressure sealing ability.
CN103446946AActive Publication Date: 2013-12-18FUNIK ULTRAHARD MATERIAL
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FUNIK ULTRAHARD MATERIAL
Publication Date
2013-12-18

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Abstract

The invention relates to a secondary anvil of an octahedral pressure cavity static high-pressure device. An anvil body is in a cube shape; an anvil surface is a regular triangular surface formed by cutting a corner of the cubic anvil body; at least one circle of outer ring surface is arranged around the anvil surface; the outer ring surface in each same circle comprises three trapezoidal slants which are same in shape and size; a regular triangle is enclosed by the bottom edges of the three trapezoidal slants. The secondary pressurizing unit of the octahedral pressure cavity static high-pressure device comprises the eight secondary anvils, a previous sealing strip and an octahedral pressure transmitting medium. Compared with the traditional secondary pressurizing unit, for the secondary pressurizing unit which comprises the secondary anvils disclosed by the invention, experiments indicate that the blasting probability is obviously reduced during operation and the maximal pressure which can be achieved a the body of an octahedral pressure cavity can be increased.
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Description

technical field

[0001] The invention belongs to a pressure device used in a superhigh pressure environment, in particular to a secondary anvil and a secondary booster unit in an octahedral pressure cavity static high pressure device used in material synthesis. technical background

[0002] The unique two-stage pressurization unit of the static high-pressure device in the octahedral pressure chamber enables this static high-pressure device to generate a cavity high-pressure environment with a maximum pressure of about 90 GPa when using a secondary anvil made of polycrystalline diamond sintered body [S.Zhai, E.Ito, Geosci.Front.2101(2011)], even a secondary anvil made of tungsten carbide cemented carbide can generate a cavity high pressure environment with a maximum pressure of about 30GPa. Therefore, the use of an octahedral pressure chamber static high pressure device can directly convert graphite into diamond under higher pressure and temperature conditions, and synthesize ...

Claims

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