Novel compound semiconductor and usage for same
一种半导体、化合物的技术,应用在新型化合物半导体领域
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[0071] Prepare In, Co, Sb, and Te as reagents and mix them with a mortar to prepare the composition In 0.25 co 3.88 Sb 11 Te spherical mixture. The above-mentioned mixed materials were put into a quartz tube to be vacuum-sealed, and then heated at 650° C. for 36 hours. The time taken to raise the temperature to 650°C is 1 hour and 30 minutes, and then In 0.25 co 3.88 Sb 11 Te powder.
[0072] A part of the composite material prepared above was formed into a cylinder with a diameter of 4 mm and a length of 15 mm. Thereafter, a pressure of 200 MPa was applied to the cylinder by using CIP (cold isostatic pressing). Subsequently, the obtained product was put into a quartz tube and sintered under vacuum for 12 hours.
[0073] For the sintered cylinders, the electrical conductivity (σ) was determined at specified temperature intervals by using a ZEM-3 (Ulvac, Inc). Measurement results such as figure 1 example shown. In addition, Seebeck coefficient (S) was measured by us...
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