Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for purifying trichlorosilane

A technology for purifying trichlorosilane and trichlorosilane, which is applied in the direction of silicon halides, halosilanes, etc., can solve the problems of low purity of trichlorosilane, many impurities in the product, and the need for improvement of trichlorosilane. Response safety, high efficiency, and the effect of improving efficiency

Active Publication Date: 2016-08-17
CHINA ENFI ENGINEERING CORPORATION +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the process for preparing trichlorosilane at this stage has many impurities in the product, and the purity of trichlorosilane is low, so further purification is required
[0003] However, the method for purifying trichlorosilane at this stage still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for purifying trichlorosilane
  • Method for purifying trichlorosilane
  • Method for purifying trichlorosilane

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0089] The above part has described the method for preparing polysilicon of the present invention in detail. In order to better understand the method, the equipment capable of implementing the method will be described in detail below.

[0090] Therefore, according to another aspect of the present invention, the present invention also proposes an equipment for preparing polysilicon. According to an embodiment of the present invention, refer to image 3 , The equipment for preparing polysilicon of the present invention includes: a hydrochlorination synthesis reaction device 1 , a first rectification purification device 2 , a disproportionation reaction device 3 , a second rectification purification device 4 and a pyrolysis reaction device 5 . According to some embodiments of the present invention, the hydrochlorination synthesis reaction device 1 is used to make silicon powder, hydrogen, and at least one selected from hydrogen chloride and silicon tetrachloride undergo a hydroch...

Embodiment 1

[0112] use Figure 3-Figure 11 device shown, refer to figure 1 and figure 2 According to the flow shown, according to the method for preparing polysilicon of the present invention, trichlorosilane is prepared and purified according to the following process steps, and then polysilicon is prepared:

[0113] (1) Synthesis step of hydrochlorination: Silicon tetrachloride and hydrogen from the following steps (2) and (3) are mixed in a gas-liquid mixer, then exchange heat with the hydrogenation reactor outlet gas, and enter resistance heating Heating to a certain temperature, the mixed gas directly enters the hydrogenation reactor, the temperature is controlled at 500-550 degrees, the pressure is 1.5-3.5MPa, the ratio of silicon tetrachloride to hydrogen is 1:2-1:5, nickel-based or copper-based Under the action of catalyst, it reacts with silicon powder. After the reaction gas passes through the high-efficiency gas-solid dust collector, it exchanges heat with the gas from the g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for purifying trichlorosilane. The method comprises: performing first rectification and purification treatment on trichlorosilane so as to obtain purified trichlorosilane and first rectification raffinate, wherein the first The first rectification purification treatment is carried out by using the first rectification tower, the second rectification tower and the third rectification tower in series. The rectification temperature of the first rectification tower is 60-100 degrees Celsius, the pressure is 0.2MPa, and the reflux The ratio is 10-50:1; the rectification temperature of the second rectification tower is 100-140 degrees Celsius, the pressure is 0.5 MPa, and the reflux ratio is 20-50:1; the rectification temperature of the third rectification tower is 60-80 Celsius, the pressure is 0.2MPa, and the reflux ratio is 20-50:1. The method can effectively purify trichlorosilane, and the method is simple, safe, energy-saving, environmentally friendly, and low in cost, and the purified trichlorosilane has high purity, which can be effectively applied to the polysilicon preparation process, and the waste liquid produced can continue to use.

Description

technical field [0001] The invention relates to the technical field of photovoltaic industry, in particular to a method for purifying trichlorosilane. Background technique [0002] As a renewable and clean energy source, solar energy has attracted global attention, and the technology of using solar energy resources to generate electricity has been considered as the most promising new energy technology in the world today. Therefore, the photovoltaic industry with solar power generation technology as the core has developed rapidly in the early 21st century. As the main raw material of the photovoltaic industry, polysilicon has seen a sharp increase in demand with the rapid development of the photovoltaic industry. Furthermore, the demand for trichlorosilane, the main raw material for the production of polysilicon, has also increased. However, the process for preparing trichlorosilane at the present stage has many impurities in the product, and the purity of trichlorosilane i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 万烨张升学严大洲毋克力肖荣辉汤传斌杨永亮
Owner CHINA ENFI ENGINEERING CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products