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Equipment for Purifying Trichlorosilane

A technology for purifying trichlorosilane and trichlorosilane, which is applied in the direction of silicon halides and halosilanes, can solve the problems of low purity of trichlorosilane, many impurities in the product, and the need for improvement of trichlorosilane. Disproportionation reaction has high efficiency, good effect and low production cost

Active Publication Date: 2016-07-06
CHINA ENFI ENGINEERING CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the process for preparing trichlorosilane at this stage has many impurities in the product, and the purity of trichlorosilane is low, so further purification is required
[0003] However, the process and equipment for purifying trichlorosilane still need to be improved at this stage

Method used

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  • Equipment for Purifying Trichlorosilane
  • Equipment for Purifying Trichlorosilane
  • Equipment for Purifying Trichlorosilane

Examples

Experimental program
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Effect test

Embodiment 1

[0113] use Figure 3-Figure 11 device shown, refer to figure 1 and figure 2 According to the flow shown, according to the method for preparing polysilicon of the present invention, trichlorosilane is prepared and purified according to the following process steps, and then polysilicon is prepared:

[0114](1) Synthesis step of hydrochlorination: Silicon tetrachloride and hydrogen from the following steps (2) and (3) are mixed in a gas-liquid mixer, then exchange heat with the hydrogenation reactor outlet gas, and enter resistance heating Heating to a certain temperature, the mixed gas directly enters the hydrogenation reactor, the temperature is controlled at 500-550 degrees, the pressure is 1.5-3.5MPa, the ratio of silicon tetrachloride to hydrogen is 1:2-1:5, nickel-based or copper-based Under the action of catalyst, it reacts with silicon powder. After the reaction gas passes through the high-efficiency gas-solid dust collector, it exchanges heat with the gas from the ga...

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Abstract

The invention discloses a device for purifying trichlorosilane. The device is a first rectification purification device for performing the first rectification and purification treatment on trichlorosilane so as to obtain purified trichlorosilane and the first rectification raffinate, wherein the first rectification purification device comprises the first rectification tower, the second rectification tower and the third rectification tower connected in series, and the rectification temperature of the first rectification tower is 60-100 degrees Celsius, the pressure is 0.2MPa, and the reflux ratio is 10-50:1; the rectification temperature of the second rectification tower is 100-140 degrees Celsius, the pressure is 0.5MPa, and the reflux ratio is 20-50:1; The rectification temperature of the third rectification tower is 60-80 degrees Celsius, the pressure is 0.2 MPa, and the reflux ratio is 20-50:1. The equipment can effectively purify trichlorosilane, and the process involved in the equipment is simple, safe, energy-saving, environmentally friendly, and low in cost, and the purified trichlorosilane has high purity, which can be effectively used in the production of polysilicon, and the produced The waste liquid can continue to be used.

Description

technical field [0001] The invention relates to the technical field of the photovoltaic industry, in particular to equipment for preparing and purifying trichlorosilane. Background technique [0002] As a renewable and clean energy source, solar energy has attracted global attention, and the technology of using solar energy resources to generate electricity has been considered as the most promising new energy technology in the world today. Therefore, the photovoltaic industry with solar power generation technology as the core has developed rapidly in the early 21st century. As the main raw material of the photovoltaic industry, polysilicon has seen a sharp increase in demand with the rapid development of the photovoltaic industry. Furthermore, the demand for trichlorosilane, the main raw material for the production of polysilicon, has also increased. However, the process for preparing trichlorosilane at the present stage has many impurities in the product, and the purity o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 万烨张升学严大洲毋克力肖荣辉汤传斌杨永亮
Owner CHINA ENFI ENGINEERING CORPORATION
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