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Manufacturing method of light-emitting diode

A technology of light-emitting diodes and electrodes, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the light output rate of light-emitting diodes, and achieve the effect of high light extraction efficiency

Active Publication Date: 2016-04-27
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the refractive index of the semiconductor is greater than that of air, most of the near-field evanescent light waves from the active layer are confined inside the light-emitting diode until they are completely absorbed by the material in the light-emitting diode, which affects the light extraction rate of the light-emitting diode.

Method used

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  • Manufacturing method of light-emitting diode
  • Manufacturing method of light-emitting diode
  • Manufacturing method of light-emitting diode

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Embodiment Construction

[0039] The light-emitting diode provided by the embodiment of the present invention and the manufacturing method thereof will be described in detail below with reference to the accompanying drawings.

[0040] see figure 1 , the first embodiment of the present invention provides a light-emitting diode 10 with a lateral structure, which includes: a substrate 110, a buffer layer 116, a first semiconductor layer 120, an active layer 130, a second semiconductor layer 140, a metal The ceramic layer 160 , a first electrode 124 and a second electrode 144 . The buffer layer 116, the first semiconductor layer 120, the active layer 130, the second semiconductor layer 140 and the cermet layer 160 are sequentially stacked on an epitaxial growth surface 112 of the substrate 110, and The buffer layer 116 is disposed adjacent to the substrate 110 . The first electrode 124 is electrically connected to the first semiconductor layer 120 . The second electrode 144 is electrically connected to ...

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Abstract

The invention relates to a method for preparing a light-emitting diode, which comprises the following steps: step a: providing a substrate with an epitaxial growth surface; step b: epitaxially growing a first semiconductor layer and an active layer on the epitaxial growth surface of the substrate. layer and a second semiconductor layer, and the first semiconductor layer, the active layer and the second semiconductor layer are sequentially stacked and grown; step c: forming a cermet layer, which is formed on the second semiconductor layer away from One side of the substrate; step d: forming a first electrode and a second electrode, electrically connecting the first electrode to the first semiconductor layer, and electrically connecting the second electrode to the second semiconductor layer.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting diode, in particular to a method for preparing a light-emitting diode with a lateral structure. Background technique [0002] High-efficiency blue, green and white light semiconductor structures made of gallium nitride semiconductor materials have significant characteristics such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/22H01L33/40H01L33/20
Inventor 朱钧张淏酥朱振东李群庆金国藩范守善
Owner TSINGHUA UNIV