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Semiconductor structure

A semiconductor and metal plasma technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems that affect the light output rate of semiconductor structures and cannot be emitted

Active Publication Date: 2013-12-25
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the near-field evanescent light waves from the active layer are unable to exit due to rapid attenuation in the process of radiating outwards, so they are confined inside the semiconductor structure and are completely absorbed by the materials in the semiconductor structure, which affects the light output of the semiconductor structure. Rate

Method used

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  • Semiconductor structure
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Embodiment Construction

[0026] Embodiments and specific embodiments of the semiconductor structure, the light emitting diode and the manufacturing method thereof provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0027] see figure 1 , the first embodiment of the present invention provides a semiconductor structure 10, which includes a substrate 110, a buffer layer 116, a first semiconductor layer 120, an active layer 130, a second semiconductor layer 140, a third optically symmetrical layer 150 , a metal plasma generation layer 160 , a fourth optically symmetrical layer 170 , a first optically symmetrical layer 180 and a second optically symmetrical layer 190 . The buffer layer 116, the first semiconductor layer 120, the active layer 130, the second semiconductor layer 140, the third optically symmetrical layer 150, the metal plasma generation layer 160, the fourth optically symmetrical layer 170, the first optically symmetrical layer 18...

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Abstract

The invention relates to a semiconductor structure comprising an active layer, wherein the active layer includes a first semiconductor layer, an activity layer and a second semiconductor layer which are sequentially arranged in a stacked way, a metal plasma generating layer is arranged at one side of the active layer, a first optical symmetry layer is arranged at one side, away from the active layer, of the metal plasma generating layer, and the difference between the refractive index of the first optical symmetry layer and the refractive index of the active layer is smaller than or equal to 0.3. The semiconductor structure has a good light emitting effect in application.

Description

technical field [0001] The present invention relates to a semiconductor structure. Background technique [0002] High-efficiency blue, green and white light semiconductor structures made of gallium nitride semiconductor materials have significant characteristics such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional semiconductor structure generally includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The surface of the P-type semiconductor layer away from the substrate serves as a light-emitting surface of the semiconductor structure. When the semiconductor structure is in working state, positi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/46
CPCH01L33/04H01L33/22H01L33/44H01L29/0657
Inventor 朱钧张淏酥李群庆金国藩范守善
Owner TSINGHUA UNIV