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Semiconductor structure

A semiconductor and cermet technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting the light output rate of semiconductor structures

Active Publication Date: 2013-12-25
TSINGHUA UNIV +1
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Problems solved by technology

However, the near-field evanescent light waves (waves with an attenuation distance less than 20 nanometers) from the active layer cannot be emitted due to rapid attenuation during the outward radiation process, so they are confined inside the semiconductor structure and are trapped by the materials in the semiconductor structure. Complete absorption, which affects the light extraction rate of the semiconductor structure

Method used

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  • Semiconductor structure
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[0057] see Figure 8 , the sixth embodiment of the present invention provides a method for manufacturing a light emitting diode 20, which includes the following steps:

[0058] Step S610: providing a substrate 110 having an epitaxial growth surface 112;

[0059] Step S620: epitaxially growing a buffer layer 116, a first semiconductor layer 120, an active layer 130, and a second semiconductor layer 140 sequentially on the epitaxial growth surface 112 of the substrate 110;

[0060] Step S630: forming a cermet layer 160 on the surface of the second semiconductor layer 140 away from the substrate 110;

[0061] Step S640: removing the base 110 to expose the surface of the first semiconductor layer 120 in contact with the base 110; and

[0062] Step S650 : preparing a first electrode 124 on the exposed surface of the first semiconductor layer 120 , and preparing a second electrode 144 electrically connected to the second semiconductor layer 140 .

[0063] In step S610, the materi...

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Abstract

The invention relates to a semiconductor structure which comprises a first semiconductor layer, an activity layer, a second semiconductor layer and a metal ceramic layer, wherein the activity layer and the second semiconductor layer are sequentially arranged on a surface of the first semiconductor layer in a stacked way, and the metal ceramic layer is arranged on a surface, away from the first semiconductor layer, of the second semiconductor layer in a contact way. The semiconductor structure has a good light emitting effect in application.

Description

technical field [0001] The present invention relates to a semiconductor structure. Background technique [0002] High-efficiency blue, green and white light semiconductor structures made of gallium nitride semiconductor materials have significant characteristics such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional semiconductor structure usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on the N-type semiconductor layer. The N-type semiconductor layer, the active layer and the P-type se...

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Application Information

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IPC IPC(8): H01L33/44H01L33/20H01L31/0216
CPCH01L31/02168H01L31/068H01L33/22H01L33/44Y02E10/52Y02E10/547H01L31/056H01L31/0547H01L33/58
Inventor 朱钧张淏酥朱振东李群庆金国藩范守善
Owner TSINGHUA UNIV
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