Photo mask, photo mask manufacturing method, pattern transfer method and flat panel display manufacturing method

Abstract

The present invention provides a photo mask, a photo mask manufacturing method, a pattern transfer method and a flat panel display manufacturing method. Alignment of each area is accurately performed in the photo mask in need of multiple scanning, and the implement number of a photoetching process can be restrained. The photo mask manufacturing method comprises preparing a photo mask blank obtained by forming a first etchant resist film by an upper layer film and a lower layer film which are laminated on the upper layer of a transparent substrate and made from materials which are different in exposure light transmissivity and have etching selectivity; performing a first scanning on the first etchant resist film, forming a first etchant resist pattern of provisional patterns for forming and delimiting areas of an upper layer film pattern and a lower layer film pattern; performing a first etching process on the upper layer film; forming a second etchant resist film on the whole face; performing a second scanning on the second etchant resist film, so as to form a second etchant resist pattern for forming a lower layer film pattern; performing a second etching process on the lower layer film; and performing a third etching process to remove the provisional patterns.

Description

technical field [0001] The present invention relates to a method for producing a photomask having a transfer pattern, a photomask produced by the production method, a pattern transfer method using the photomask, and a flat panel display using the pattern transfer method method. Background technique [0002] In photomasks used in liquid crystal display devices, large-scale integrated circuits, etc., when forming fine patterns, there is a problem that it is necessary to eliminate alignment fluctuations due to manufacturing processes as much as possible and accurately manufacture them. [0003] Patent Document 1 below describes a phase shift mask in which a light-shielding film is patterned and a film having a phase difference of 180° with respect to the i-line is formed so as to cover the light-shielding film. A thick phase shift layer is obtained, thereby enabling the formation of fine and high-precision patterns. In addition, Patent Document 2 described below describes a m...

AI Technical Summary

Problems solved by technology

In general, the increase in the drawing process has a great impact on production efficiency, so for photomasks used in the manufacture of large-area devices such as flat panel displays, the reduction in productivity due to the addition of one drawing process cannot be ignored

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