Unlock instant, AI-driven research and patent intelligence for your innovation.

Devices Including Tantalum Alloy Layers

A technology for tantalum alloys and devices, which is applied in the field of devices including tantalum alloy layers, and can solve the problems of low grinding rate and the like

Active Publication Date: 2017-03-01
SEAGATE TECH LLC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Tantalum can be ground at a slower rate than other materials in the stack, causing problems during the grinding and lapping process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Devices Including Tantalum Alloy Layers
  • Devices Including Tantalum Alloy Layers
  • Devices Including Tantalum Alloy Layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] In the following description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration several specific embodiments. It is to be understood that other embodiments can be conceived and made without departing from the scope or spirit of the present disclosure. Therefore, the following detailed description does not have a limiting meaning.

[0014] Unless otherwise specified, all numbers expressing characteristic sizes, amounts and physical properties used in the specification and claims are to be understood as being modified in every instance by the term "about". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can, using the teachings disclosed herein, vary depending upon the desired properties sought to be obtained by those skilled in the art.

[0015] The recitation of numerical ranges by endpoints in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to devices comprising tantalum alloy layers. A device comprising a sensor stack comprising a reference layer, a free layer, and a barrier layer between the reference layer and the free layer; a seed layer; and a capping layer, wherein the sensor stack is located on the between the seed layer and the cladding layer, and wherein the seed layer or at least one of the cladding layers comprises TaX, where X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof of.

Description

[0001] priority claim [0002] This application claims priority to U.S. Provisional Application No. 61 / 663,721, docket number 430.17140000, filed June 25, 2012, entitled "DEVICESINCLUDING TANTALUM ALLOY LAYERS," the disclosure of which is incorporated by reference included here. technical field [0003] The present invention relates to a device, in particular to a device comprising a tantalum alloy layer. Background technique [0004] Currently employed magnetoresistive devices, such as magnetoresistive heads used in magnetic readers, employ tantalum as a seed and cladding layer to aid in the growth of the magnetic layer. Tantalum can be milled at a slower rate than the other materials in the stack, causing problems during the milling and lapping process. Therefore, there is a need for other materials used in the seed layer and / or coating. Contents of the invention [0005] Disclosed herein is a device comprising a sensor stack comprising a reference layer, a free layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10H10N50/80
CPCG01R33/098G11B5/39G11B5/62H10N50/80
Inventor E·W·辛格尔顿谭利文李宰荣
Owner SEAGATE TECH LLC