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IGBT (Insulated Gate Bipolar Transistor) driving circuit with dead zone adjustment

A driving circuit and dead zone adjustment technology, applied in the direction of electrical components, output power conversion devices, etc., can solve the problems of device turn-on and turn-off, delay, etc., to avoid shoot-through, improve reliability, and low cost.

Inactive Publication Date: 2014-01-22
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since there is a certain junction capacitance in power devices such as IGBT, it will cause a delay in the turn-on and turn-off of the device.

Method used

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  • IGBT (Insulated Gate Bipolar Transistor) driving circuit with dead zone adjustment

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Embodiment Construction

[0008] The specific implementation manner of the present invention will be further described below in conjunction with the accompanying drawings.

[0009] Such as figure 1 As shown, an IGBT drive circuit with dead zone adjustment includes a sliding rheostat R1, a first resistor R2, a second resistor R3, a third resistor R4, a fourth resistor R5, a fifth resistor R6, a sixth resistor R7, a Seventh resistor R8, eighth resistor R9, ninth resistor R10, tenth resistor R11, first capacitor C1, second capacitor C2, third capacitor C3, fourth capacitor C4, fifth capacitor C5, square wave generator U1 ( ICL8038), inverter U2 (CD4069), optocoupler U3 (HCPL2531), Schmitt inverter U4 (74HC14N).

[0010] Pin 7 of the square wave generator U1 is connected to pin 8, pin 4 of the square wave generator U1 is connected to one end of the first resistor R2, and the other end of the first resistor R2 is connected to a fixed end of the sliding rheostat R1, The sliding end of the sliding rheos...

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Transistor) driving circuit with dead zone adjustment. The IGBT driving circuit comprises a slide rheostat R1, a first resistor R2, a second resistor R3, a third resistor R4, a fourth resistor R5, a fifth resistor R6, a sixth resistor R7, a seventh resistor R8, an eighth resistor R9, a ninth resistor R10, a tenth resistor R11, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a square-wave generator U1, a phase inverter U2, a photoelectric coupler U3 and a Schmidt phase inverter U4. According to the IGBT driving circuit, used components and parts are developed and reliable, low in cost and abundant in sources. The circuit provided by the invention is the IGBT driving circuit with the dead zone adjustment and can drive a large-power ultrasonic transducer; up-down bridge arm direct connection caused by a turn-off delay effect can be avoided effectively; and the reliability and the safety of the working of an IGBT module are improved.

Description

technical field [0001] The invention belongs to the technical field of industrial control and relates to a circuit, in particular to an ultrasonic power supply current detection circuit. Background technique [0002] Ultrasound generally requires relatively large power in industrial applications. Considering cost and efficiency, IGBT (insulated gate power tube) four-bridge drive circuit is generally used as the drive module. The IGBT drive circuit is used to drive the IGBT module to enable It works properly and at the same time it protects the circuit. Since there is a certain junction capacitance in power devices such as IGBTs, it will cause delays in the turn-on and turn-off of the devices. Generally, the influence has been reduced as much as possible when designing the circuit, such as increasing the driving voltage and current of the control electrode as much as possible, setting the junction capacitance release circuit, etc. In order to make the IGBT work reliably and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/38
Inventor 赵晓东李双双陈张平
Owner HANGZHOU DIANZI UNIV
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