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Dual Power Adaptive Control Technology Applied to Polysilicon Ingot

An adaptive control and polysilicon technology, which is applied in the growth of polycrystalline materials, crystal growth, single crystal growth, etc., can solve the problems of inaccurate temperature control, waste of energy distribution, and decline in the quality of ingots, and achieve the improvement of photoelectric conversion efficiency , Reduce energy loss and reduce power consumption

Inactive Publication Date: 2016-03-30
QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the design of the polysilicon ingot casting furnace is that there are graphite heaters on the top and side of the quartz crucible. The two heaters are connected to the dual power supply system, which is divided into the top thermal field and the side thermal field. The power distribution of the two thermal fields It is distributed according to a fixed ratio and remains constant, which makes the temperature control in the entire ingot casting process inaccurate and has a large deviation, which does not match the temperature value required by the process.
This results in a decline in the quality of the ingot and a waste of unreasonable energy distribution

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Polysilicon ingot production is carried out according to the following process:

[0023] (1) Loading and vacuuming: put 650kg of polysilicon material with a purity of 5N into the quartz crucible in the ingot furnace, and then vacuumize to 0.6Pa.

[0024] (2) Melting and heat preservation: Argon gas is introduced as a protective gas to keep the pressure in the furnace at 40kPa. In power mode, the power distribution P1:P2=1:1 through the adaptive system makes the temperature in the quartz crucible reach within 4 hours. The melting temperature of the polysilicon material, and then adopt the temperature control mode, distribute the power P1:P2=1:1.5 through the adaptive system, and keep it in the range of 1550-1565°C for 11 hours until the silicon material is completely melted.

[0025] (3) Crystal growth: after the heat preservation is over, the adaptive system distributes the power P1:P2=1:1, the temperature drops from 1550~1565°C to 1430°C for 0.5h to start crystal growt...

Embodiment 2

[0031] Polysilicon ingot production is carried out according to the following process:

[0032] (1) Loading and vacuuming: Put 650kg of polysilicon material with a purity of 6N into the quartz crucible in the ingot furnace, and then vacuumize to 1.0Pa.

[0033] (2) Melting and heat preservation: Argon gas is introduced as a protective gas to keep the pressure in the furnace at 60kPa. In the power mode, the power distribution P1:P2=1:1 through the adaptive system makes the temperature in the quartz crucible reach within 6 hours. The melting temperature of the polysilicon material, and then adopt the temperature control mode, distribute the power P1:P2=1:2.5 through the adaptive system, and keep it in the range of 1550-1565°C for 14h until the silicon material is completely melted.

[0034] (3) Crystal growth: After the heat preservation is over, the adaptive system distributes power P1:P2=1:1.75, and the temperature drops from 1550~1565°C to 1440°C for 1 hour to start crystal g...

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Abstract

The invention belongs to a polycrystalline silicon ingot casting technology, and particularly relates to a dual-power adaptive control technology applied to polycrystalline silicon ingot casting. The power P1 of a top thermal-field transformer and the power P2 of a side thermal-field transformer are autonomously allocated in each link of the ingot casting process, and the power allocation is not a constant fixed value anymore, thereby improving the polycrystalline silicon ingot casting efficiency. The technology provided by the invention has the advantages that (1) the crystal growing quality is improved through accurate control on the temperature gradient in a crystal growing process so that the photoelectric conversion efficiency of a battery piece generated by the polycrystalline silicon ingot casting processing is improved by over 0.1 while the maximum of the photoelectric conversion efficiency of the existing technology is only 17.6%; and (2) through accurate control on temperature and reasonable allocation of energy, unnecessary energy loss is reduced, and the power consumption is reduced by 10%.

Description

technical field [0001] The invention belongs to a polycrystalline silicon ingot casting process, and in particular relates to a dual power supply self-adaptive control process applied to polycrystalline silicon ingot casting. Background technique [0002] At present, my country has become the world's largest energy production and consumption country, but the per capita energy consumption level is still very low. With the continuous development of the economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply, and are working hard to improve energy efficiency, promote the development and application of renewable energy, and reduce the impact on energy consumption. Reliance on imported oil to enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent years, and its p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 姜召王峰谭毅李鹏廷刘东雷熊华江姜大川
Owner QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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