Unlock instant, AI-driven research and patent intelligence for your innovation.

Solid-state image pickup device

A solid-state imaging and semiconductor technology, applied in the direction of electric solid-state devices, radiation control devices, transistors, etc., can solve the problems of smaller effective design area and difficulty in satisfying pixel characteristics, and achieve the effect of satisfying pixel characteristics

Inactive Publication Date: 2014-01-29
KK TOSHIBA
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In solid-state imaging devices, the effective design area becomes smaller along with the miniaturization of pixels. Therefore, it is difficult to meet the pixel characteristics by simply shrinking photodiodes and / or transistors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state image pickup device
  • Solid-state image pickup device
  • Solid-state image pickup device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0025] The solid-state imaging device of the first embodiment will be described.

[0026] figure 1 It is a structural layout diagram of the solid-state imaging device of the first embodiment.

[0027] As shown in the figure, active regions AA1 and AA2 are arranged on a semiconductor substrate, and first and second unit cells (cell units) are formed in the active regions AA1 and AA2.

[0028] The first unit cell includes: a photoelectric conversion unit, such as photodiodes PD1-1, PD1-2, PD1-3, PD1-4; transfer transistors TG1-1, TG1-2, TG1-3, TG1-4; amplifier transistor AMP1 ; reset transistor RST1 ; floating diffusion layers FD1 - 1 , FD1 - 2 .

[0029] The first unit cell has the following configuration. In active region AA1, photodiodes PD1-1 and PD1-2 are arranged along the column direction. In the vicinity of the photodiode PD1-1, a transfer transistor TG1-1 is arranged. In the vicinity of the photodiode PD1-2, a transfer transistor TG1-2 is arranged. Furthermore, a ...

no. 2 Embodiment approach

[0061] In the aforementioned first embodiment, the source region, channel region, and drain region of the reset transistor form an L-shape. In the second embodiment, it is explained that the source region, channel region, and drain region of the reset transistor form a T-shape. Type example.

[0062] Figure 5 It is a structural layout diagram of the solid-state imaging device of the second embodiment.

[0063] As shown in the figure, active regions AA1 and AA2 are arranged on a semiconductor substrate, and first and second unit cells are formed in the active regions AA1 and AA2.

[0064] The first unit unit includes: photodiodes PD1-1, PD1-2, PD1-3, PD1-4; transfer transistors TG1-1, TG1-2, TG1-3, TG1-4; amplifier transistor AMP1; reset transistor RST3; Floating diffusion layers FD1-1, FD1-2.

[0065] The first unit cell has the following configuration. In active region AA1, photodiodes PD1-1 and PD1-2 are arranged along the column direction. In the vicinity of the photo...

no. 3 Embodiment approach

[0096] In the aforementioned second embodiment, the active region of the reset transistor is formed in a T-shape, and in the third embodiment, an example in which the active region of the reset transistor is formed in a cross shape will be described.

[0097] Figure 9 It is a structural layout diagram of the solid-state imaging device of the third embodiment.

[0098] As shown in the figure, active regions AA1 and AA2 are arranged on a semiconductor substrate, and first and second unit cells are formed in the active regions AA1 and AA2.

[0099] The first unit cell includes: photodiodes PD1-1, PD1-2, PD1-3, PD1-4; transfer transistors TG1-1, TG1-2, TG1-3, TG1-4; amplifier transistor AMP3; reset transistor RST5, RST6; floating diffusion layers FD1-1, FD1-2.

[0100] The first unit cell has the following configuration. In active area AA1, photodiodes PD1-1, PD1-2 are arranged along the column direction. In the vicinity of the photodiode PD1-1, a transfer transistor TG1-1 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to one embodiment, a solid-state image pickup device includes a photoelectric converter, transfer, reset and amplifier transistors and a floating diffusion layer formed on a semiconductor substrate. The photoelectric converter coverts incident light to a signal charge. The transfer transistor transfers the signal charge converted by the photoelectric converter. The floating diffusion layer stores the signal charge transferred by the transfer transistor. The reset transistor resets the signal charge stored in the floating diffusion layer. The amplifier transistor amplifies the signal charge stored in the floating diffusion layer. Source and drain regions of the reset transistor, and its channel region are formed in an L-shape on the semiconductor substrate.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from Japanese Patent Application No. 2012-157885 filed on July 13, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] This embodiment relates to a solid-state imaging device. Background technique [0004] In solid-state imaging devices, the effective design area becomes smaller along with the miniaturization of pixels, so it is difficult to satisfy the pixel characteristics by simply shrinking photodiodes and / or transistors. [0005] In order to achieve miniaturization while satisfying the characteristics of pixels, it is necessary not only to increase the sharing degree of pixels and to reduce the number of transistors occupied by one pixel, but also to arrange photodiodes and transistors efficiently. Contents of the invention [0006] The problem to be solved by the present invention is to provide a solid-state imaging ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14643H01L27/14616H01L27/14641H01L27/146
Inventor 下村亚衣矢神贵规
Owner KK TOSHIBA