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Compound semiconductor device and method of manufacturing the same

A technology of semiconductors and compounds, which is applied in the field of compound semiconductor devices and their manufacturing, and can solve the problems of reducing device reliability, device characteristic degradation or breakdown, etc.

Inactive Publication Date: 2014-01-29
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In either case, high electric fields can cause degradation or breakdown of device characteristics, which can significantly reduce device reliability

Method used

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  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same

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Experimental program
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no. 1 approach ）

[0043] In the first embodiment, a Schottky-type AlGaN / GaN HEMT is disclosed as a compound semiconductor device.

[0044] Figure 1A to Figure 1C to Figure 3A to Figure 3C is a schematic cross-sectional view showing a method of manufacturing the Schottky-type AlGaN / GaN HEMT according to the first embodiment in the order of processing.

[0045] First, if Figure 1A As shown in , a compound semiconductor layer 2 having a stacked structure of compound semiconductors is formed on, for example, a semiconductor insulating SiC substrate 1 as a growth substrate.

[0046] A Si substrate, a sapphire substrate, a GaAs substrate, a GaN substrate, or the like can be used instead of the SiC substrate as the growth substrate. The conductivity of the substrate can be semi-insulating or conducting.

[0047] The compound semiconductor layer 2 includes a buffer layer 2a, an electron transit layer 2b, an intermediate layer 2c, an electron supply layer 2d, and a protective layer 2e. In the AlG...

Deformed example 2-

[0124] Modification 2 differs from the first embodiment in the partial shape of the protective insulating film. It should be noted that those components that are the same as those of the AlGaN / GaN HEMT according to the first embodiment and the like will be denoted by the same reference numerals, and a detailed description thereof will be omitted.

[0125] Figure 13A to Figure 13C is a schematic cross-sectional view showing main processes in the method of manufacturing the Schottky-type AlGaN / GaN HEMT according to Modification 2 of the first embodiment.

[0126] First, through the first embodiment of Figure 1A to Figure 2B In the process, the protective insulating film 6 covering the top of the compound semiconductor layer 2 is formed. exist Figure 13A The result of this processing is shown in .

[0127] Subsequently, if Figure 13B As shown in , a first trench 6 d is formed in the protective insulating film 6 .

[0128] More specifically, a resist is first applied on ...

Deformed example 3-

[0147] Modification 3 is different from the first embodiment in that the shapes of the second trench formed in the protective insulating film and a part of the protective insulating film are different. It should be noted that those components that are the same as those of the AlGaN / GaN HEMT according to the first embodiment and the like will be denoted by the same reference numerals, and a detailed description thereof will be omitted.

[0148] Figure 17A to Figure 17C and Figure 18 is a schematic cross-sectional view showing main processes in the method of manufacturing the Schottky-type AlGaN / GaN HEMT according to Modification 3 of the first embodiment.

[0149] First, through the first embodiment of Figure 1A to Figure 2A In the process, the protective insulating film 6 covering the top of the compound semiconductor layer 2 is formed. exist Figure 17A The result of this processing is shown in .

[0150] Subsequently, if Figure 17B As shown in , a first trench 6 c ...

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Abstract

A compound semiconductor device includes a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer; and a gate electrode formed on the protective insulating film, wherein the protective insulating film has a first trench and a second trench which is formed side by side with the first trench and in which the protective insulating film remains with only a predetermined thickness on the compound semiconductor layer, and wherein the gate electrode fills the first trench, and one end of the gate electrode is away from the first trench and located at least in the second trench.

Description

technical field [0001] Embodiments discussed herein focus on compound semiconductor devices and methods of manufacturing the same. Background technique [0002] Semiconductor devices, especially nitride semiconductor devices, have been actively developed as high withstand voltage, high power semiconductor devices by utilizing their characteristics such as high saturation electron velocity, wide band gap, and the like. Many reports have been made on field effect transistors, especially HEMTs (High Electron Mobility Transistors) which are nitride semiconductor devices. In particular, an AlGaN / GaN HEMT using GaN as an electron transit layer (electron transit layer) and AlGaN as an electron supply layer has attracted attention. In the AlGaN / GaN HEMT, distortion caused by a difference in lattice constant between GaN and AlGaN occurs in AlGaN. Due to the piezoelectric polarization (piezoelectric polarization) caused by distortion and due to the spontaneous polarization of AlGaN,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/778H01L29/7787H01L29/2003Y02B70/1475H01L29/42372H01L29/402H01L29/66462H01L29/66431H02M3/33592H02M3/335Y02B70/10H01L29/4175H01L21/28581H01L21/28264H01L21/28537H01L21/76879
Inventor 牧山刚三冈本直哉吉川俊英
Owner FUJITSU LTD