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Light-emitting element with Bragg reflector between window layers

A technology of Bragg reflector and light-emitting element, which is applied to semiconductor devices, electrical components, and components of lighting devices, etc. of light-emitting elements, can solve the problems of reducing the light extraction efficiency of existing light-emitting elements 2 and being unable to be extracted.

Active Publication Date: 2018-04-20
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the side surface of the substrate 20 is too small so that the light reflected by the Bragg reflection layer 28 cannot be extracted, thus reducing the light extraction efficiency of the conventional light-emitting element 2

Method used

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  • Light-emitting element with Bragg reflector between window layers
  • Light-emitting element with Bragg reflector between window layers
  • Light-emitting element with Bragg reflector between window layers

Examples

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Embodiment Construction

[0032] The embodiments of the present invention will be described in detail and drawn in the drawings, and the same or similar parts will appear in the drawings and descriptions with the same numbers.

[0033] figure 1 It is shown that a light emitting device 1 has a substrate 10; a light emitting stack 12 is formed on the substrate 10; and a light extraction structure 18 is formed under the substrate 10. The light-emitting stack 12 has a first semiconductor layer 122; a second semiconductor layer 126; and an active layer 124 located between the first semiconductor layer 122 and the second semiconductor layer 126. In addition, a first electrode 14 is formed on the first semiconductor layer 122 and a second electrode 16 is formed on the second semiconductor layer 126.

[0034] The light extraction structure 18 has a first window layer 182 under the substrate 10; a second window layer 186 under the first window layer 182, and a Bragg reflection layer 184 on the first window layer 18...

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PUM

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Abstract

The invention discloses a light-emitting element with a Bragg reflective layer located between window layers, which comprises a substrate; a light-emitting laminated layer located on the substrate; a first window layer located below the substrate; and a Bragg reflective layer, It is located under the first window layer; where viewed in section, the width of the first window layer is equal to the width of the substrate.

Description

Technical field [0001] The present invention relates to a light-emitting element, in particular to a light-emitting element having a Bragg reflector (DBR) located between window layers. Background technique [0002] A light-emitting diode (LED) is a solid-state semiconductor device that includes at least one p-n junction (p-n junction) formed between the p-type and n-type semiconductor layers. When a certain degree of bias is applied to the LED, holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer combine to release light. This light-generating region is generally also called a light-emitting region or active layer. [0003] The main characteristics of LED are small size, high reliability, high luminous efficiency, long life, fast response and good chromaticity. It has been widely used in optical display devices, traffic signs, data storage devices, communication devices, lighting devices and Medical equipment. With the advent of full-color...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46
CPCF21V3/00F21V13/02F21Y2101/00F21K9/232F21Y2105/10F21Y2115/10H01L33/405H01L33/46F21V5/04F21V3/02F21V29/77F21K9/237H01L33/06H01L33/60
Inventor 邱柏顺郭得山涂均祥柯竣腾
Owner EPISTAR CORP