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A memory device structure and preparation method of electrical programming-ultraviolet light erasing

A storage device and ultraviolet light technology, which is applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of low device erasing efficiency, improve erasing efficiency and working speed, expand application space, Possibility-enhancing effects

Inactive Publication Date: 2019-01-15
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on the above background, in order to solve the problem of low device erasing efficiency, the present invention proposes an electrical programming-ultraviolet light erasing non-volatile TFT memory structure and its preparation method, that is, the device is erased by ultraviolet light irradiation. remove

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  • A memory device structure and preparation method of electrical programming-ultraviolet light erasing
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  • A memory device structure and preparation method of electrical programming-ultraviolet light erasing

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Embodiment 1

[0068] Step 1: Select a heavily doped N-type single crystal silicon wafer with a resistivity of 0.008~0.100 Ω cm as the substrate, and clean the silicon wafer through a standard RCA cleaning process, and then use hydrofluoric acid to remove the surface of the silicon wafer oxide layer.

[0069] Step 2: On the cleaned silicon wafer, use ALD method to deposit and grow Al 2 o 3 The thin film acts as a blocking oxide layer for the memory. Al 2 o 3 The thickness of the film is 20~150nm; during the deposition process, the substrate temperature is controlled between 100~300 ℃; 2 o 3 The reaction sources are trimethylaluminum and water vapor.

[0070] Step 3: Using ALD method on Al 2 o 3 A layer of Pt nanocrystals is deposited on the film as the charge trapping layer of the memory. The reaction sources for the deposition of Pt nanocrystals are (MeCp)Pt(Me)3 and O 2 , the deposition temperature is 200~400°C, and the number of deposition cycles is 10~100.

[0071] Step 4: Dep...

Embodiment 2

[0081] Step 1: Select a heavily doped N-type single crystal silicon wafer with a resistivity of 0.008~0.100 Ω cm as the substrate, and clean the silicon wafer through a standard RCA cleaning process, and then use hydrofluoric acid to remove the surface of the silicon wafer oxide layer.

[0082] Step 2: On the cleaned silicon wafer, use ALD method to deposit and grow Al 2 o 3 The thin film acts as a blocking oxide layer for the memory. al 2 o 3 The thickness of the film is 20~150nm; during the deposition process, the substrate temperature is controlled between 100~300°C; the growth of Al 2 o 3 The reaction sources are trimethylaluminum and water vapor.

[0083] Step 3: Using ALD method on Al 2 o 3 A layer of ZnAlO film with a thickness of 10-50nm is deposited on the film as the charge trapping layer of the memory. The reaction sources for depositing ZnAlO thin films are trimethylaluminum, diethylzinc and water vapor, and the deposition temperature is 100~300°C. During ...

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Abstract

The invention proposes a memory device structure and a preparation method for electric programming-ultraviolet light erasing. The heavily doped N-type single crystal silicon wafer is used as the substrate and used as the lead-out electrode of the gate; the denser oxide insulator is used as the charge blocking layer of the memory; the thin film material or nanocrystal with more charge defects is used as the The charge trapping layer; the oxide insulator with better density and larger band gap is used as the tunneling layer of the memory; the IGZO thin film is used as the conductive channel of the memory, and the active area is defined by photolithography and wet etching and the conductive layer is formed. channel; through photolithography, metal deposition and lift-off technology, the processing of source and drain is completed; during testing, a positive pulse is added to the gate electrode to realize the programming operation of the device; the device is irradiated with ultraviolet light without any bias Press to erase the device. The invention solves the problem that the TFT memory based on the IGZO channel cannot be erased; improves the erasing efficiency and working speed of the device; and expands the application space of the TFT memory based on the IGZO channel.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, and proposes a structure and a preparation method of an electric programming-ultraviolet light erasing memory for a non-volatile fast flash memory. Background technique [0002] System Panel (SOP) technology integrates various functional components on the same display panel to obtain a high-performance and low-cost system. It is used in the fields of automobiles, computers, consumer electronics, military electronics, wireless communications, and food testing It has important application prospects. As an important component in SOP, non-volatile thin-film transistor (TFT) memory can not only be used for circuit-level adjustment and voltage modification, but also suitable for large-capacity storage of complex display parameters, etc. In the future, pixel storage and storage blocks are also expected to be directly Integrated on the display board, it can not only realize dat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/792H01L29/51H01L21/336
CPCH10B43/00H10B43/30
Inventor 丁士进崔兴美陈笋
Owner FUDAN UNIV
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