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86results about How to "Improve the possibility of application" patented technology

Method for obtaining high-performance polyaniline base thermoelectric materials

The invention discloses a method for obtaining high-performance polyaniline base thermoelectric materials. The method comprises the following steps: (1) mixing polyaniline powder with ammonia water solution, carrying out stir, filter and drying, and obtaining eigen-state polyaniline, (2) mixing the polyaniline with sulfonic acid, carrying out grind, and obtaining polyaniline doped with the sulfonic acid, (3) dissolving the polyaniline doped with the sulfonic acid in phenol solvent, carrying out stirr, and obtaining polyaniline solution, and (4) adding nanocarbon materials in the polyaniline solution, carrying out stir in a full mode, removing the phenol solvent, and obtaining the high-performance polyaniline base thermoelectric materials. According to the method for obtaining the high-performance polyaniline base thermoelectric materials, the order degree of polyaniline molecular chain arrangement is firstly improved through interaction of the phenol solvent and polyaniline molecules, then through composition with the nano carbon composite materials, the order degree of the polyaniline molecular chain arrangement is further enhanced, and the high-performance polyaniline base thermoelectric materials are obtained. Therefore, ZT values of the polyaniline base thermoelectric materials and ZT values of block-shaped materials can be respectively improved by 0.5 and 0.05.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1

Electrical programming-ultraviolet light erasing memory device structure and preparation method thereof

The invention provides an electrical programming-ultraviolet light erasing memory device structure and a preparation method thereof. A heavily-doped N type monocrystalline silicon wafer is used as a substrate and an extraction electrode of a gate; an oxide insulator with relatively good compactness is used as a charge barrier layer of a memory; a thin-film material with many charge defects or nanocrystalline is used as a charge capture layer; an oxide insulator with relatively good compactness and a forbidden band being large in width as a tunneling layer of the memory; an IGZO film is used as an electroconductive channel of the memory, an active area is defined through photoetching and wet etching and the electroconductive channel is formed; processing of a source electrode and a drain electrode is completed through photoetching, metal deposition and stripping technology; in test, a positive pulse is applied to a gate electrode to realize programming operation of the device; and erasure of the device is realized by using ultraviolet light to irradiate the device without applying any bias voltage. The electrical programming-ultraviolet light erasing memory device structure solves the problem that an IGZO channel-based TFT memory cannot be erased; the erasure efficiency and the working speed of the device are improved; and the application space of the IGZO channel-based TFT memory is enlarged.
Owner:FUDAN UNIV

Accelerator capable of improving functionalization process of adoptive DCs (Dendritic Cells), as well as preparation method and application of accelerator

ActiveCN105079802AImprove homing efficiencyExpected goodInorganic non-active ingredientsBlood/immune system cellsDendritic cellStimulant
The invention discloses an accelerator capable of improving a functionalization process of adoptive DCs (Dendritic Cells), as well as a preparation method and application of the accelerator. Main ingredients of the accelerator comprise an immunologic stimulant-nanometer gold compound and an antigen-nanometer gold compound, which are obtained by modifying gold nanoparticles with an immunologic stimulant and an antigen respectively; or the main ingredients comprise an immunologic stimulant-antigen-nanometer gold compound obtained by jointly modifying the gold nanoparticles with the immunologic stimulant and the antigen. According to the accelerator, nanometer gold with the characteristics of high biocompatibility, adjustable surface physicochemical properties and the like is used as a nanometer targeting vector of adoptive DCs vaccines, and the shapes or the particle sizes of the nanometer material are screened or effectively combined for properties of different junctional complexes, so that the homing efficiency of lymphoid organs under the local or intravenous infusion of the adoptive DCs vaccines is greatly improved, and a new idea is provided for clinical screening in the future.
Owner:FIELD OPERATION BLOOD TRANSFUSION INST OF PLA SCI ACAD OF MILITARY

Electrostatic condenser based on nano electrodes and preparation method of electrostatic condenser

The invention discloses an electrostatic condenser based on nano electrodes and a preparation method of the electrostatic condenser. The condenser comprises two groups of pore arrays which are inserted into each other in parallel, are not communicated with each other, are provided with openings towards different surfaces and are arranged in an anode aluminum oxide template, wherein carbon nano tubes electrically connected with conductive films covering the surfaces of the pore arrays are deposited in pores. The method comprises the following steps of: preparing a secondary aluminum oxide template in a secondary anode oxidation method, wherein one surface of the template is provided with a first pore array, and the back of the template is provided with gaps which are parallel to pores of the first pore array and formed in the circumference of an arc barrier layer formed by the pores of the first pore array; corroding the back of the secondary aluminum oxide template in an acidic copper chloride solution to obtain the anode aluminum oxide template on one surface of which the first pore array is arranged and on the back of which a second pore array is arranged; and depositing the carbon nano tubes in the pores of the first pore array and the second pore array by a chemical vapor deposition technology, and performing evaporation on the conductive films on the two surfaces of the anode aluminum oxide template, thus obtaining the target product. The electrostatic condenser can be widely applied to the field of energy storage and utilization.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

Potts model calculation device

Provided is a Potts model calculation device with which it is possible to calculate a Potts problem that is a multivalued spin problem. Provided is a Potts model calculation device provided with an Ising model calculation device, a calculation result retaining / determination unit for retaining an Ising model spin value obtained when a given coupling coefficient is set in the Ising model calculationdevice and determining the termination of calculation, and a coupling coefficient setting unit for setting a coupling coefficient created on the basis of the retained spin value to the Ising model calculation device, wherein the Potts model calculation device is characterized in that: the coupling coefficient setting unit recreates a coupling coefficient to be set in the m+1'th step to the Isingmodel calculation device in accordance with the Ising model spin value obtained by the Ising model calculation unit as the result of a calculation that corresponds to the coupling coefficient set in the m'th step, and sets the recreated coupling coefficient; and the calculation result retaining / determination unit determines that the calculation is terminated when, in a case in which the value thatthe multivalued spin can assume is Si = 0, 1, 2, ..., M-1 (M being a natural number), and M <= 2Ms, a coupling coefficient setting count in the coupling coefficient setting unit has reached a count that corresponds to Ms (Ms being a natural number), and calculates a value Si obtained by substituting, for the expression, the spin value sigma im obtained as the result of calculation on the basis ofthe coupling coefficient that is set in the m'th step, thereby calculating the problem mapped to the Potts model using the Ising model.
Owner:NIPPON TELEGRAPH & TELEPHONE CORP
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