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Method and structure for far ultraviolet electrostatic chuck with reduced clamping effect

An electrostatic chuck and far-ultraviolet technology, which is applied to circuits, electrical components, electrical solid devices, etc., can solve the problems that the pressure cannot be evenly distributed, cannot effectively reduce the wafer pressure, and increase the stress.

Active Publication Date: 2017-03-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing methods and wafer structures cannot effectively reduce the stress on the wafer
In particular, the pressure is not uniformly distributed over the wafer surface and gradually increases the stress

Method used

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  • Method and structure for far ultraviolet electrostatic chuck with reduced clamping effect
  • Method and structure for far ultraviolet electrostatic chuck with reduced clamping effect
  • Method and structure for far ultraviolet electrostatic chuck with reduced clamping effect

Examples

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Embodiment Construction

[0030] It should be understood that the following invention provides many different embodiments or examples for implementing the different features of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, they are merely examples and not intended to be limiting. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the purposes of brevity and clarity only and does not in itself dictate a relationship between the various embodiments and / or structures discussed. Also, the formation of the first component on the second component in the following description may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component is formed on the first component and the second component. Between, such that the first part and...

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Abstract

The present invention provides an embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front side and a back side; integrated circuit components formed on the front side of the semiconductor substrate; and a polysilicon layer disposed on the back side of the semiconductor substrate. The invention also provides a method and a structure for a far-ultraviolet electrostatic chuck with reduced clamping effect.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technology, and more particularly, to semiconductor structures and methods of forming the same. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development. Technological advances in IC materials and design have produced multiple IC eras, where each era has smaller and more complex circuits than the previous era. However, these advances have increased the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing are required for advances to be realized. [0003] Integrated circuits are typically formed on semiconductor wafers. Various photolithographic processes are used to form the individual components that make up the integrated circuits on the wafer. These components include transistors, diodes, capacitors, resistors, and various interconnect and isolation components. In advan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/04H01L21/02G03F7/00
CPCH01L29/34H01L21/26506H01L21/6831G03F7/70708H01L2924/0002H01L2924/00G03F7/00H01L21/0201H01L21/0274H01L21/32155H01L23/562H01L29/0603
Inventor 许家豪陈家桢傅中其高慈炜林毓超
Owner TAIWAN SEMICON MFG CO LTD