Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pressure sensor array and manufacturing method thereof

A pressure sensor and array technology, applied in the sensor field, can solve the problems of sensitivity and low resolution of the pressure sensor, and achieve the effects of saving preparation cost, simple preparation process and simple structure

Active Publication Date: 2014-03-26
BEIJING INST OF NANOENERGY & NANOSYST
View PDF3 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the defects of insufficient sensitivity and low resolution of the above-mentioned existing pressure sensors, the present invention provides a pressure sensor array capable of overcoming the defects and a preparation method thereof

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pressure sensor array and manufacturing method thereof
  • Pressure sensor array and manufacturing method thereof
  • Pressure sensor array and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] For the pressure sensor array in this embodiment, see figure 1 and Fig. 2, including: substrate 1; semiconductor film layer 2 on the substrate; nanowires or nanorod arrays 3 with piezoelectric properties on the semiconductor film layer 2; gaps between nanowires or nanorod arrays 3 are filled with dielectric Material 4, the dielectric material may be transparent or non-transparent or translucent; an upper electrode 6 on the nanowire or nanorod array 3; and a lower electrode 5 on the semiconducting thin film layer 2. Wherein, the nanowire or nanorod array 3 forms a luminescent PN junction with the semiconductor thin film layer 2 . The pressure sensor array also includes upper electrode lead-out wires 7 and lower electrode lead-out wires 8 which are necessarily related to the pressure sensor array according to the present invention, and are used for applying driving voltage to the pressure sensor array device.

[0038] Since the nanowire or nanorod array 3 forms a lumines...

Embodiment 2

[0068] For the pressure sensor array in this embodiment, see Figure 4 , fabricated on the substrate 11, including: the bottom electrode 21 on the substrate 11, the sensing cell array on the bottom electrode 21 and the top electrode 61 on the sensing cell array, wherein the sensing cell is composed of the region 31 and the region 41 to form a light-emitting PN junction, wherein the material of the P-type region and / or N-type region of the PN junction is a piezoelectric material; the gap of the sensing unit is filled with a dielectric material 51, and the dielectric material 51 can be Transparent or opaque or translucent. The pressure sensor array also includes wires 71 and wires 81 drawn from the bottom electrode 21 and the top electrode 61 , which are necessarily related to the pressure sensor array according to the present invention. In the present invention, the light-emitting diode (PN junction) is used as the basic pixel unit, and the driving voltage is applied to the wi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a pressure sensor array and a manufacturing method thereof. The pressure sensor array adopts light-emitting PN junctions as sensing units. The materials of P-type regions and / or N-type regions of the light-emitting PN junctions are piezoelectric materials. When an external stress is applied to the surface of a pressure sensor array device formed by the light-emitting PN-junction sensing unit array, uneven distribution of the stress on the surface of the device makes piezoelectric potential fields generated on the piezoelectric material of each light-emitting PN junction different in size so that changes of different degrees are generated in light-emitting intensity of each light-emitting PN junction which is used as a basic pixel unit. Through the change of light-emitting intensity of each pixel point in the PN junction array, information of the stress which is applied to the surface of the pressure sensor array device can be obtained rapidly.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a pressure sensor array and a preparation method thereof. Background technique [0002] Compared with the biomimicry of other human senses (vision, hearing, smell and taste) which are relatively well developed, the biomimicry of touch is still an unsolved problem. Because the bionics of touch requires high-resolution, high-sensitivity, and fast-response large-area stress sensor arrays, current international research efforts are mainly focused on single nanoscale stress sensor devices, and studying the response of these single nanoscale stress sensor devices to force . At present, Z.N.Bao's research group at Stanford University and Ali Javey's research group at the University of California, Berkeley have begun to study array pressure sensors, which use self-assembled nanowires, organic field effect tubes or microstructured rubber as basic units. The change in resistance after stress is us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/113H01L41/27H10N30/30H10N30/05
Inventor 王中林潘曹峰
Owner BEIJING INST OF NANOENERGY & NANOSYST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products