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39 results about "Piezoelectric potential" patented technology
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Power generation using batteries with reconfigurable discharge
A petroleum well (20) for producing petroleum products that incoroprates a system adapted to provide power to a down-hole device (50) in the well (20). The system comprises a current impedance device (70) and a downhole power storage device (112). The current impedance device (70) is positioned such that when a time-varying electrical current is transmitted through the portion of a piping structure (30 and / or 40) a voltage potential forms between one side (81) of the current impedance device (70) and another side (82) of the current impedance device (70). The device (112) is adapted to be electrically connected to the piping structure (30 and / or 40) across the voltage potential formed by the current impedance device (70), is adapted to be recharged by the electrical current, and is adapted to be electrically connected to the downhole device (50) to provide power to the downhole device (50) as needed.
Owner:SHELL OIL CO
Pressure sensor array and manufacturing method thereof
ActiveCN103682078ARapid responseHigh resolutionPiezoelectric/electrostrictive device manufacture/assemblyElectricityLuminous intensity
The invention provides a pressure sensor array and a manufacturing method thereof. The pressure sensor array adopts light-emitting PN junctions as sensing units. The materials of P-type regions and / or N-type regions of the light-emitting PN junctions are piezoelectric materials. When an external stress is applied to the surface of a pressure sensor array device formed by the light-emitting PN-junction sensing unit array, uneven distribution of the stress on the surface of the device makes piezoelectric potential fields generated on the piezoelectric material of each light-emitting PN junction different in size so that changes of different degrees are generated in light-emitting intensity of each light-emitting PN junction which is used as a basic pixel unit. Through the change of light-emitting intensity of each pixel point in the PN junction array, information of the stress which is applied to the surface of the pressure sensor array device can be obtained rapidly.
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Transistor and transistor array
ActiveCN103579490AEffective regulationValid triggerSolid-state devicesPiezoelectric/electrostrictive devicesTransistor arrayMicro nano
The invention provides a transistor which comprises a piezoelectric crystal, a first electrode and a second electrode. The first electrode and the second electrode are oppositely arranged at the two ends of the piezoelectric crystal respectively. The first electrode and / or the second electrode are / is used for exerting strain or stress on the piezoelectric crystal. Materials of the piezoelectric crystal have the piezoelectric effect under the action of the strain or the stress. Correspondingly, the invention further provides a transistor array. Strain or stress or pressure is exerted on the electrode of one end of the piezoelectric crystal, so that the piezoelectric crystal correspondingly deforms, the interface barrier between the piezoelectric crystal materials and electrode materials can be effectively regulated by generated piezoelectric potential, and the function similar to grid voltage in a field effect transistor is achieved. The transistor or the transistor array can be applied to the fields of micro-nano electromechanical systems, nano-robots, human-computer interaction interfaces, flexible sensors and the like.
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Energy pack
ActiveCN103000954ALossless retention of energy storage propertiesSimple structureHybrid capacitorsFinal product manufactureElectricitySelf-energy
The invention provides an energy pack. The energy pack comprises a positive electrode and a negative electrode separated by electrolyte, and also comprises a piezoelectric ion transmission layer positioned between the positive electrode and the negative electrode, wherein the piezoelectric ion transmission layer generates a piezoelectric field pointing from the positive electrode to the negative electrode under the action of mechanical force. According to the energy pack, a piezoelectric ion transmission layer material is introduced between the positive electrode and the negative electrode to replace inherent units of device construction of a cell or a super-capacitor. Therefore, the energy storage characteristics of the existing electrochemical system is nondestructively kept, and ions in the electrolyte are driven to migrate by piezoelectric potential generated by the piezoelectric material under the mechanical action, thereby causing nonuniform redistribution of ion concentration to trigger the charging process. Accordingly, the energy pack provided by the invention has a function of self energy charging.
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Preparation method of flexible organic piezoelectric-photocatalytic composite helical fibers
ActiveCN109331882AAchieving Simple Harmonic VibrationEfficient separationWater/sewage treatment by irradiationWater treatment compoundsFiberPhotocatalytic water splitting
The invention discloses a preparation method of flexible organic piezoelectric-photocatalytic composite helical fibers. The method comprises the following steps: precursor liquid of a photocatalyst, an organic piezoelectric material and a solvent is prepared; the precursor liquid is loaded into a microfluidic device and allowed to flow out from a liquid outlet pipe with a certain caliber at a certain rate; and the effluent precursor liquid is allowed to flow into a curing liquid for curing to obtain the helical fibers. The organic piezoelectric-photocatalytic composite helical fibers preparedwith the method can continuously generate self-repairing piezoelectric potentials under the action of waterflows, so that the separation of photo-generated electron-hole pairs in the photocatalyst canbe effectively promoted, and the photocatalysis efficiency can be greatly improved; and by adopting the composite helical fibers prepared with the method, the organic hazardous substance degradationefficiency of the photocatalyst can be remarkably improved, and the effects of hydrogen production through photocatalytic water splitting can be effectively enhanced.
Owner:NANJING UNIV OF TECH
Multifrequency capacitively coupled plasma etch chamber
InactiveUS20170213734A9Electric discharge tubesSemiconductor/solid-state device manufacturingInductorEngineering
A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
Owner:LAM RES CORP
Cantilever beam-type composite nano generator
ActiveCN105871245AImprove conversion efficiencySmall footprintPiezoelectric/electrostriction/magnetostriction machinesDynamo-electric machinesCantilevered beamNanogenerator
The invention discloses a cantilever beam-type composite nano generator, which comprises a first cantilever beam, a second cantilever beam and a piezoelectric power generation assembly (50), wherein the first cantilever beam can elastically vibrate and comprises a first friction power generation assembly; the second cantilever beam can elastically vibrate and is used for being horizontally contacted with the first cantilever beam when at rest; the second cantilever beam comprises a second friction power generation assembly and is used for being contacted with or separated from the first friction power generation assembly during a vibration process, and during the contact and separation process, a friction potential difference is generated between the first friction power generation assembly and the second friction power generation assembly; and the piezoelectric power generation assembly (50) is arranged on the first cantilever beam and / or the second cantilever beam for generating stretching and / or compression deformation during the vibration process, and a piezoelectric potential difference is generated in the piezoelectric power generation assembly. According to the cantilever beam-type composite nano generator, through vibration between the first cantilever beam and the second cantilever beam, friction electric signals and piezoelectric electric signals are generated, and the energy conversion efficiency can be improved.
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Medical patch
ActiveUS20150182741A1RegenerateSkin stimulationMaterial nanotechnologyPretreated surfacesPiezoelectric potentialSkin tissue
A medical patch having an electric potential generating structure which is attachable to a wound to thus regenerate injured skin tissues is provided. The medical patch includes a unit patch having a piezoelectric potential generating structure. The unit patch includes a first layer, a second layer and a piezoelectric nanomaterial disposed between the first and second layers.
Owner:IND ACADEMIC CORP FOUND YONSEI UNIV +1
Effective efuse structure
An electrically programmable fuse (eFuse) comprises a semiconductor layer, a silicide layer overlying the semiconductor layer, and first and second contact structures electrically coupled to the silicide layer. The first contact structure is configured to function as an anode and the second contact structure is configured to function as a cathode. The eFuse further comprises a back-gate structure disposed underneath the semiconductor layer in a back-gate structure region proximate the second contact structure, the back-gate structure region excluding a region proximate the first contact structure. Responsive to (i) a programming voltage potential supplied between the first and second contact structures and (ii) a voltage potential supplied to the back-gate structure, silicide of the silicide layer operates to migrate, with an enhanced migration, into the semiconductor layer from the cathode to the anode with an absence of silicide residue in at least the back-gate structure region of the semiconductor layer between the first and second contact structures.
Owner:NXP USA INC
Low power content addressable memory architecture
InactiveCN1620701AEliminate or reduce shortcomingsReduce power consumptionDigital storageControl signalLine search
A low power CAM architecture is disclosed. Matchlines of the CAM array are segmented into a pre search portion and a main search portion. After issuing a search command, a pre search operation is conducted on the pre search portion of the matchline. If the result of the pre search is a match, then the main search is subsequently conducted on the main search portion of the matchline. If the result of pre search is a mismatch, then the main-search is disabled, and consequently there is no power dissipation on the main search portion of the matchlines. Pre search and main search operations can be pipelined to maintain high throughput with minimum latency. Power consumption is further reduced by using a matchline sense circuit for detecting a current on the pre search and main search portions of the matchline. Matchlines are decoupled from the sense circuit sense node in order to achieve higher sensing speed and improved sense margins, and dummy matchlines are used to generate timed control signals for latching the output of the matchline sense circuits. The matchlines are initially precharged to a miss condition represented by ground potential and are then undergo accelerated precharge to a preset voltage potential level below VDD to overcome tail-out parasitic current and to minimize the voltage swing of the matchlines to conserve power.
Owner:CONVERSANT INTPROP MANAGEMENT INC
Device and method for generating a laser pulse
ActiveUS11329451B2Improve efficiencyLaser detailsLaser output parameters controlElectrical connectionPiezoelectric potential
A device for generating a laser pulse. The device includes a laser diode that includes a first diode and a second diode, so that the laser diode includes a first anode, a second anode, and a cathode. The device further includes a first voltage potential that is electrically connected to the second anode, a second voltage potential that has a lower value than the first voltage potential, a first switch that is electrically connected to the first anode and to the second voltage potential, and a second switch that is electrically connected to the cathode and to the second voltage potential. A resistor is electrically connected to the first anode and to the second anode.
Owner:ROBERT BOSCH GMBH
Device and method for generating a laser pulse
ActiveUS20200321748A1Improve efficiencyLaser detailsSemiconductor lasersElectrical connectionPiezoelectric potential
A device for generating a laser pulse. The device includes a laser diode that includes a first diode and a second diode, so that the laser diode includes a first anode, a second anode, and a cathode. The device further includes a first voltage potential that is electrically connected to the second anode, a second voltage potential that has a lower value than the first voltage potential, a first switch that is electrically connected to the first anode and to the second voltage potential, and a second switch that is electrically connected to the cathode and to the second voltage potential. A resistor is electrically connected to the first anode and to the second anode.
Owner:ROBERT BOSCH GMBH
Transistors and magnetic sensors based on magnetostrictive potential
ActiveCN109244132ASolve complexitySolve the need for an external amplifierMagnetic measurementsSemiconductor devicesPower flowGate voltage
A transistors based on magnetostrictive potential includes a substrate made of a magnetostrictive material and a ferroelectric transistor disposed on that substrate, and a piezoelectric lay included in the ferroelectric transistor. The transistor of the invention is mainly composed of three different functional materials, namely, magnetostrictive layer base material, piezoelectric layer material and semiconductor layer material, and is vertically stacked. The magnetopiezoelectric transistor according to the invention can also be used as a magnetic sensor. When the sensor is placed in a magnetic field, the magnetostrictive material generates strain and transmits the strain to the piezoelectric material in the ferroelectric transistor, so that the piezoelectric material generates piezoelectric potential; As that gate voltage, the piezoelectric potential can be use to adjust the carrier concentration in the semiconductor so as to change the resistance in the semiconductor. If a voltage isapply to both the source and drain terminals of the semiconductor, the current will be changed after a magnetic field is apply. The piezoelectric potential can be used as a gate voltage to adjust thecarrier concentration in the semiconductor so as to change the resistance in the semiconductor.
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Coating diaphragm, preparation method and method for inhibiting lithium dendrites
PendingCN113745759AGrowth inhibitionAvoid depositionSecondary cellsCell component detailsPhysical chemistryPiezoelectric potential
The invention discloses a coating diaphragm, a preparation method and a method for inhibiting lithium dendrites. The coating diaphragm comprises a base membrane and a piezoelectric polymer coating smeared on at least one surface of the base membrane. According to the coating diaphragm, the piezoelectric polymer coating is additionally arranged on the surface of the base diaphragm, when the coating diaphragm is used, the piezoelectric polymer coating of the coating diaphragm is in contact with a negative electrode, and when a trace amount of lithium dendrites are formed, the piezoelectric polymer coating of the coating diaphragm is extruded to form piezoelectric potential, so that the lithium element is prevented from continuously depositing at the point, and the purpose of inhibiting the growth of lithium dendrites is achieved. The coating diaphragm provided by the invention can inhibit the growth of lithium dendrites and avoid the problems of potential safety hazards, capacity reduction and the like caused by the mass growth of the lithium dendrites.
Owner:深圳市鼎泰祥新能源科技有限公司
Self-powered generator, method of fabricating the same and piezoelectric enery-harvesting device using the generator
ActiveUS9929336B2Good adhesionSimple structurePiezoelectric/electrostrictive device manufacture/assemblyPiezoelectric/electrostriction/magnetostriction machinesElectricityElectrical polarity
A self-powered generator is provided. The generator includes a piezoelectric nanorod member layer that includes a first layer; a second layer; and a plurality of piezoelectric nanorods disposed between the first and second layers. The piezoelectric nanorod is a biaxially-grown nanorod. When mechanical energy is applied from an outside, an upper half and a lower half of each of the plurality of piezoelectric nanorods generate piezoelectric potentials having opposite polarities, the upper half and the lower half being on both sides of a longitudinal axis along an axis perpendicular to the longitudinal axis.
Owner:IND ACADEMIC COOP FOUND YONSEI UNIV
Manufacturing method of negative electrode graphene
The invention discloses a manufacturing method of negative electrode graphene. The manufacturing method comprises the following steps of adding the graphene into a penetrating agent for dispersion, wherein the penetrating agent is a non-ion chelate; adding boron oxide into the mixture for further dispersion so that the boron oxide is uniformly dispersed on the graphene and graphene lattices are in full contact with boron ions; placing the mixed material in full contact with the boron ions in a reaction kettle for ion permeation reaction; and performing cleaning after the fabrication of the negative electrode graphene is completed through reaction. According to the manufacturing method of the negative electrode graphene, the boron ions are mainly embedded onto the graphene lattices to be used as a negative electrode of a battery, and the boron material is low in cost, is easy to obtain, has positive piezoelectric potential characteristic and is an excellent material of the graphene battery negative electrode. By the fabrication method, the function development of the graphene is achieved, and the application range of the graphene is expanded.
Owner:柯良节 +2
Power generation fabric structure and preparation method thereof
ActiveCN109936306AAdvantage structureMerit methodWeft knittingPiezoelectric/electrostriction/magnetostriction machinesFiberElectricity
The invention discloses a power generation fabric structure and a preparation method thereof, and relates to the technical field of piezoelectric intelligent fabrics. According to the power generationfabric structure and the preparation method thereof, a core electrode is used as a core layer; a first conductive fabric and a second conductive fabric are woven by the PVDF fibers which are used asconnecting yarns and conductive yarns of a shell layer, so as to jointly prepare a power generation fabric structure; a core electrode in the polarized connecting yarns is used as an output electrode;the conductive yarns in the first conductive fabric and the second conductive fabric are used as another electrode so that charges with opposite polarities are generated between the inner surface andthe outer surface of the PVDF fiber shell layer of the connecting yarn due to a piezoelectric effect when the first conductive fabric and the second conductive fabric are deformed under the action ofexternal force, and a potential difference is formed, thereby generating a current. After the power generation fabric structure is used for an intelligent fabric, due to the fact that the piezoelectric potential difference comes from the inner surface and the outer surface of the PVDF fiber shell layer, the unique power generation structure can avoid the short circuit phenomenon, and the charge collection efficiency is high.
Owner:JIAXING UNIV
Graphene quantum well optical detector
ActiveCN105336808AImprove quantum efficiencyHigh detection sensitivitySemiconductor devicesHigh energyOptical detector
The invention discloses a graphene quantum well optical detector. The graphene quantum well optical detector comprises a first piezoelectric layer, a second piezoelectric layer and a quantum well layer, wherein both the first piezoelectric layer and the second piezoelectric layer are made of piezoelectric materials; the quantum well layer is located between the first piezoelectric layer and the second piezoelectric layer and comprises two semiconductor sublayers and a graphene nanoribbon located between the two semiconductor sublayers. The graphene quantum well optical detector has the advantages that the optimal bias voltage of a quantum well is used for making the highest energy level in the quantum well aligned with the boundary of a conduction band to form a maximum output light current, and then highest detection sensitivity is achieved; piezoelectric potential is used for adjusting the bias voltage of the quantum well, so that the quantum efficiency of a single quantum well is improved.
Owner:TSINGHUA UNIV
Circuit arrangement and method of driving a high-pressure gas discharge lamp
InactiveCN101379891AEasy to manufactureCheap manufacturingElectrical apparatusElectric lighting sourcesGas-discharge lampCoupling
A circuit arrangement (1, 1', 1'') for driving a high-pressure gas discharge lamp (2) is described, which has a first terminal (x1) for a first voltage potential, a second terminal (x2) for a second voltage potential, and a third terminal (x4) for applying a third voltage potential for igniting the high-pressure gas discharge lamp (2). Furthermore, the circuit arrangement (1, 1', 1'') has a first electrical connection (5) which at its first end provides a first connection terminal (3) for a high-pressure gas discharge lamp (2) and which is coupled by its second end to the first terminal (x1) for the first voltage potential, a second electrical connection (6) which at its first end provides a second connection terminal (4) for a high-pressure gas discharge lamp (2) and which is coupled by its second end to the second terminal (x2) for the second voltage potential, and an ignition device (8) which at its input side is connected at least to the third terminal (x4) and is coupled at its output side to one of the connection terminals (3) for the high-pressure gas discharge lamp (2). Moreover, the circuit arrangement ( 1, 1', 1'') has a first inductor (L1) arranged in the first electrical connection (5), as well as a second inductor (L2) arranged in the second electrical connection (6), which inductors together form a current-compensated choke (L1, 2) through magnetic coupling, and a resistor (R1) of more than 10 O arranged in a third electrical connection (7) between the ignition device (8) and the third terminal (x4).
Owner:LUMILEDS HLDG BV
High-frequency high-voltage potential field kinetic energy sterilization and virus killing device and combined device thereof
PendingCN114811811ASimple structureImprove securityMechanical apparatusLighting and heating apparatusHemt circuitsMicroparticle
The invention discloses a high-frequency high-voltage potential field kinetic energy sterilization and virus killing device and a combined device thereof. Comprising an adapter, an ion module connected with the positive output end of the adapter, a loop electrode plate connected with the negative output end of the adapter, a positive electrode plate connected with the positive output end of the ion module, and an emission needle plate connected with the negative output end of the ion module. The loop electrode plates are respectively and correspondingly arranged between two adjacent positive electrode plates; the ion module is internally provided with a positive and negative high-voltage output circuit so as to control the voltage difference output by the positive and negative output ends of the ion module to be 25-30KV. By means of the mode, the device is energy-saving, efficient, good in safety performance and long in service life, oxygen molecules and microparticles in air carry free electrons through the emission needle plate, when the oxygen molecules and microparticles pass through a high-voltage electric field formed between the positive electrode plate and the loop electrode plate, bacterial colonies and viruses make contact with the electrode plates to generate a microcosmic point-touch lightning effect, and therefore the oxygen molecules and the microparticles can be purified. And the internal structure is instantly damaged, so that rapid inactivation is realized.
Owner:JIANGSU YIMAO FILTER MEDIA CO LTD
A kind of transistor and transistor array
ActiveCN103579490BEffective regulationValid triggerSolid-state devicesPiezoelectric/electrostrictive devicesTransistor arrayMicro nano
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
PendingCN112689890ASemiconductor/solid-state device testing/measurementSemiconductor/solid-state device detailsWaferingElectromagnetic shielding
A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.
Owner:KLA TENCOR TECH CORP
Processor element for quantum information processor
Processor elements are described herein. A processor element comprises a silicon layer. The processor element further comprises one or more conductive electrodes. The processor element further comprises dielectric material having a non-uniform thickness, the dielectric material disposed at least between the silicon layer and the one or more conductive electrodes. In use, when a bias potential is applied to one or more of the conductive electrodes, the positioning of the one or more conductive electrodes and the non-uniform thickness of the dielectric material together define an electric field profile to induce a quantum dot at an interface between the silicon layer and the dielectric layer. Methods are also described herein.
Owner:QUANTUM MOTION TECH LTD
Flexibly designable converter cell
PendingCN114424443AReduce diversityAc-dc conversion without reversalPrinted circuit board receptaclesConvertersControl signal
A converter unit has a main printed circuit board (8) on which at least one functional module (1, 5) is arranged. By means of the functional module (1, 5), at least one alternating voltage (L1, L2, L3, U, V, W) fed to the functional module (1, 5) via a first power supply interface (2, 7) of the functional module (1, 5) can be converted into at least two direct-current piezoelectric potentials (U +, U-, U0) output via a second power supply interface (3, 6) of the functional module (1, 5). The main printed circuit board (8) has conductor tracks (10, 11, 14, 15) via which the control signals (C11 to C46) can be fed to the control interfaces (12, 13, 16, 17). The main printed circuit board (8) has conductor tracks (10, 11, 14, 15) extending from the control unit (9) to the first and second control interfaces (12, 13, 16, 17) of the main printed circuit board (8), and the first and second control signals (C11 to C46) can be fed to the first and second control interfaces (12, 13, 16, 17) via the conductor tracks. The functional module (1, 5) is at least mechanically connected to the main printed circuit board (8) at least in the region of the first and second control interfaces (12, 13, 16, 17). However, the functional module is designed in such a way that it does not use the first control signal (C11 to C16, C31 to C36) and / or the second control signal (C21 to C26, C41 to C46).
Owner:SIEMENS AG
Manufacturing method of positive electrode graphene
InactiveCN107452959AEasy to makeLow priceCarbon compoundsCell electrodesMixed materialsManganese oxide
The invention discloses a manufacturing method of positive electrode graphene. The manufacturing method comprises the following steps of adding the graphene into a penetrating agent for dispersion, wherein the penetrating agent is a non-ion chelate; adding manganese oxide into the mixture for further dispersion so that the manganese oxide is uniformly dispersed on the graphene and graphene lattices are in full contact with manganese ions; placing the mixed material in full contact with the manganese ions in a reaction kettle for ion permeation reaction; and performing cleaning after the fabrication of the positive electrode graphene is completed through reaction. According to the manufacturing method of the positive electrode graphene, the manganese ions are mainly embedded onto the graphene lattices to be used as a positive electrode of a battery, and the manganese material is low in cost, is easy to obtain, has positive piezoelectric potential characteristic and is an excellent material of the graphene battery positive electrode. By the fabrication method, the function development of the graphene is achieved, and the application range of the graphene is expanded.
Owner:柯良节 +2
Power module, electric control box and air conditioner
ActiveCN108122890BRealize detectionReduce difficultySemiconductor/solid-state device testing/measurementSemiconductor/solid-state device detailsPotential measurementHome appliance
The invention discloses a power module, an electric control box, and an air conditioner. The power module comprises a substrate, a wiring board and a transistor welded on the wiring board, wherein thesubstrate, the wiring board and the transistor are sequentially disposed from the bottom to the top. A potential measurement region which is exactly opposite to the transistor is disposed between thesubstrate and the wiring board. The power module also comprises a piezoelectric potential measurement module located in the potential measurement region, and the piezoelectric potential measurement module comprises a plurality of potential measurement units which are arranged at intervals. Each potential measurement unit comprises a piezoelectric image unit, a first electrode piece and a second electrode piece, wherein the first electrode piece and the second electrode piece are respectively disposed at two ends of the potential measurement unit and are electrically connected with the potential measurement unit, the first electrode piece is connected with a first pin, and the second electrode piece is connected with a second pin. The power module provided by the invention can reduce the difficulty of a welding hole detection test of the power module so that a user carries out the operation of the welding hole detection test.
Owner:WUHU MATY AIR CONDITIONING EQUIP CO LTD +1
Heterojunction direct-current piezoelectric nano generator and preparation method thereof
PendingCN110534640AAchieve neutralizationPiezo potential cancellationMaterial nanotechnologyPiezoelectric/electrostrictive device manufacture/assemblyNanogeneratorPiezoelectric potential
The invention belongs to the technical field of nano generators, and discloses a heterojunction direct-current piezoelectric nano generator and a preparation method thereof. In the heterojunction direct-current piezoelectric nano generator, a rectification effect exists between an upper electrode prepared from silicon and a lower electrode with a zinc oxide nanowire array, so that the neutralization of the piezoelectric potential in the interior can be effectively achieved and the piezoelectric potentials are eliminated, when a piezoelectric unit of the upper electrode is in contact with the positive potential region of the zinc oxide nanowire array of the lower electrode, a current can be suppressed, and when the piezoelectric unit of the upper electrode is in contact with the negative potential region of the zinc oxide nanowire array of the lower electrode, the current is released, and macroscopically, a stable one-way direct current is output, so that the concept of the heterojunction direct-current piezoelectric nano-generator is effectively achieved, and a new thought is opened up for integration of the direct-current piezoelectric nano-generator on a silicon substrate.
Owner:SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
A cantilever beam composite nanogenerator
ActiveCN105871245BImprove conversion efficiencySmall footprintPiezoelectric/electrostriction/magnetostriction machinesDynamo-electric machinesCantilevered beamNanogenerator
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Pressure sensor array and its preparation method
ActiveCN103682078BRapid responseHigh resolutionPiezoelectric/electrostrictive device manufacture/assemblyLuminous intensityDevice form
The present invention provides a pressure sensor array and a preparation method thereof. The pressure sensor array uses a luminescent PN junction as a sensing unit. The material of the P-type region and / or the N-type region of the luminescent PN junction is a piezoelectric material. When external stress is applied to the surface of a pressure sensor array device composed of a luminescent PN junction sensing unit array, due to the non-uniform distribution of stress on the surface of the device, a piezoelectric force is generated on the piezoelectric material of each luminescent PN junction. The size of the electric potential field is different, which causes the luminous intensity of each light-emitting PN junction of the basic pixel unit to change to varying degrees. Through the change of the luminous intensity of each pixel point in the PN junction array, the surface of the pressure sensor array device can be quickly obtained. information on the applied stress.
Owner:BEIJING INST OF NANOENERGY & NANOSYST
Heat extraction assembly for a semiconductor power module
PendingCN112106194ASemiconductor/solid-state device detailsSolid-state devicesElectrical conductorPiezoelectric potential
The invention relates to a heat extraction assembly (20) for a semiconductor power module, comprising three stacked joint partners (24, 26, 28) integrally bonded together by a first solder layer (22A)and by a second solder layer (22B), and a corresponding semiconductor power module comprising at least one of these heat extraction assemblies (20) and a method for bonding a layer stack consisting of three joining partners (24, 26, 28) in such a heat extraction assembly (20). The first solder layer (22A) is formed between a first, electroconducting joining partner (24) and a central, electrically insulating joining partner (26), and the second solder layer (22B) is formed between the central, electrically insulating joining partner (26) and a second, electroconducting joining partner (28), wherein the first joining partner (24) is a first conducting track (24A) from which heat is to be extracted and to which a first voltage potential is applied, the second joining partner (28) is a second conducting track (28A) that acts as a heat sink and to which a second voltage potential different from the first voltage potential is applied, and the central joining partner (26) is an electricallyinsulating intermediate layer (26A) that forms an electrically insulated heat-dissipation path between the first joining partner (24) and the second joining partner (28).
Owner:ROBERT BOSCH GMBH
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