38 results about "Piezoelectric potential" patented technology

The invention provides a transistor which comprises a piezoelectric crystal, a first electrode and a second electrode. The first electrode and the second electrode are oppositely arranged at the two ends of the piezoelectric crystal respectively. The first electrode and/or the second electrode are/is used for exerting strain or stress on the piezoelectric crystal. Materials of the piezoelectric crystal have the piezoelectric effect under the action of the strain or the stress. Correspondingly, the invention further provides a transistor array. Strain or stress or pressure is exerted on the electrode of one end of the piezoelectric crystal, so that the piezoelectric crystal correspondingly deforms, the interface barrier between the piezoelectric crystal materials and electrode materials can be effectively regulated by generated piezoelectric potential, and the function similar to grid voltage in a field effect transistor is achieved. The transistor or the transistor array can be applied to the fields of micro-nano electromechanical systems, nano-robots, human-computer interaction interfaces, flexible sensors and the like.

The invention discloses a preparation method of flexible organic piezoelectric-photocatalytic composite helical fibers. The method comprises the following steps: precursor liquid of a photocatalyst, an organic piezoelectric material and a solvent is prepared; the precursor liquid is loaded into a microfluidic device and allowed to flow out from a liquid outlet pipe with a certain caliber at a certain rate; and the effluent precursor liquid is allowed to flow into a curing liquid for curing to obtain the helical fibers. The organic piezoelectric-photocatalytic composite helical fibers preparedwith the method can continuously generate self-repairing piezoelectric potentials under the action of waterflows, so that the separation of photo-generated electron-hole pairs in the photocatalyst canbe effectively promoted, and the photocatalysis efficiency can be greatly improved; and by adopting the composite helical fibers prepared with the method, the organic hazardous substance degradationefficiency of the photocatalyst can be remarkably improved, and the effects of hydrogen production through photocatalytic water splitting can be effectively enhanced.

The invention discloses a cantilever beam-type composite nano generator, which comprises a first cantilever beam, a second cantilever beam and a piezoelectric power generation assembly (50), wherein the first cantilever beam can elastically vibrate and comprises a first friction power generation assembly; the second cantilever beam can elastically vibrate and is used for being horizontally contacted with the first cantilever beam when at rest; the second cantilever beam comprises a second friction power generation assembly and is used for being contacted with or separated from the first friction power generation assembly during a vibration process, and during the contact and separation process, a friction potential difference is generated between the first friction power generation assembly and the second friction power generation assembly; and the piezoelectric power generation assembly (50) is arranged on the first cantilever beam and/or the second cantilever beam for generating stretching and/or compression deformation during the vibration process, and a piezoelectric potential difference is generated in the piezoelectric power generation assembly. According to the cantilever beam-type composite nano generator, through vibration between the first cantilever beam and the second cantilever beam, friction electric signals and piezoelectric electric signals are generated, and the energy conversion efficiency can be improved.

A medical patch having an electric potential generating structure which is attachable to a wound to thus regenerate injured skin tissues is provided. The medical patch includes a unit patch having a piezoelectric potential generating structure. The unit patch includes a first layer, a second layer and a piezoelectric nanomaterial disposed between the first and second layers.

An electrically programmable fuse (eFuse) comprises a semiconductor layer, a silicide layer overlying the semiconductor layer, and first and second contact structures electrically coupled to the silicide layer. The first contact structure is configured to function as an anode and the second contact structure is configured to function as a cathode. The eFuse further comprises a back-gate structure disposed underneath the semiconductor layer in a back-gate structure region proximate the second contact structure, the back-gate structure region excluding a region proximate the first contact structure. Responsive to (i) a programming voltage potential supplied between the first and second contact structures and (ii) a voltage potential supplied to the back-gate structure, silicide of the silicide layer operates to migrate, with an enhanced migration, into the semiconductor layer from the cathode to the anode with an absence of silicide residue in at least the back-gate structure region of the semiconductor layer between the first and second contact structures.

A low power content addressable memory (CAM) architecture is hereby disclosed. Wherein, the matching line of the CAM array is segmented into a pre-search part and a main search part. After the search command is issued, the pre-search operation will be performed on the pre-search part of the matching line. If the pre-search result is a match, then the main search is continued on the main search portion of the matching line. If the pre-search result is a mismatch, the main search is disabled, so there is no power dissipation on the main search portion of the match line. Pre-search and main search operations can be pipelined to maintain high throughput and minimum latency. A match line sensing circuit is also used to detect the current on the match line pre-search and main search parts, so as to further reduce power consumption. The match line is decoupled from the sensing node of the sensing circuit to achieve higher sensing speed and improved sensing margin while using the analog match line to generate a timing control signal to latch the output of the match line sensing circuit . Each match line is initially precharged to a fallout condition represented by ground potential, and then accelerated to a preset voltage potential level below VDD to overcome tailing parasitic currents and allow the match line voltage swing Minimized to save power.

A device for generating a laser pulse. The device includes a laser diode that includes a first diode and a second diode, so that the laser diode includes a first anode, a second anode, and a cathode. The device further includes a first voltage potential that is electrically connected to the second anode, a second voltage potential that has a lower value than the first voltage potential, a first switch that is electrically connected to the first anode and to the second voltage potential, and a second switch that is electrically connected to the cathode and to the second voltage potential. A resistor is electrically connected to the first anode and to the second anode.

A transistors based on magnetostrictive potential includes a substrate made of a magnetostrictive material and a ferroelectric transistor disposed on that substrate, and a piezoelectric lay included in the ferroelectric transistor. The transistor of the invention is mainly composed of three different functional materials, namely, magnetostrictive layer base material, piezoelectric layer material and semiconductor layer material, and is vertically stacked. The magnetopiezoelectric transistor according to the invention can also be used as a magnetic sensor. When the sensor is placed in a magnetic field, the magnetostrictive material generates strain and transmits the strain to the piezoelectric material in the ferroelectric transistor, so that the piezoelectric material generates piezoelectric potential; As that gate voltage, the piezoelectric potential can be use to adjust the carrier concentration in the semiconductor so as to change the resistance in the semiconductor. If a voltage isapply to both the source and drain terminals of the semiconductor, the current will be changed after a magnetic field is apply. The piezoelectric potential can be used as a gate voltage to adjust thecarrier concentration in the semiconductor so as to change the resistance in the semiconductor.

The invention discloses a manufacturing method of negative electrode graphene. The manufacturing method comprises the following steps of adding the graphene into a penetrating agent for dispersion, wherein the penetrating agent is a non-ion chelate; adding boron oxide into the mixture for further dispersion so that the boron oxide is uniformly dispersed on the graphene and graphene lattices are in full contact with boron ions; placing the mixed material in full contact with the boron ions in a reaction kettle for ion permeation reaction; and performing cleaning after the fabrication of the negative electrode graphene is completed through reaction. According to the manufacturing method of the negative electrode graphene, the boron ions are mainly embedded onto the graphene lattices to be used as a negative electrode of a battery, and the boron material is low in cost, is easy to obtain, has positive piezoelectric potential characteristic and is an excellent material of the graphene battery negative electrode. By the fabrication method, the function development of the graphene is achieved, and the application range of the graphene is expanded.

The invention discloses a power generation fabric structure and a preparation method thereof, and relates to the technical field of piezoelectric intelligent fabrics. According to the power generationfabric structure and the preparation method thereof, a core electrode is used as a core layer; a first conductive fabric and a second conductive fabric are woven by the PVDF fibers which are used asconnecting yarns and conductive yarns of a shell layer, so as to jointly prepare a power generation fabric structure; a core electrode in the polarized connecting yarns is used as an output electrode;the conductive yarns in the first conductive fabric and the second conductive fabric are used as another electrode so that charges with opposite polarities are generated between the inner surface andthe outer surface of the PVDF fiber shell layer of the connecting yarn due to a piezoelectric effect when the first conductive fabric and the second conductive fabric are deformed under the action ofexternal force, and a potential difference is formed, thereby generating a current. After the power generation fabric structure is used for an intelligent fabric, due to the fact that the piezoelectric potential difference comes from the inner surface and the outer surface of the PVDF fiber shell layer, the unique power generation structure can avoid the short circuit phenomenon, and the charge collection efficiency is high.

The invention discloses a graphene quantum well optical detector. The graphene quantum well optical detector comprises a first piezoelectric layer, a second piezoelectric layer and a quantum well layer, wherein both the first piezoelectric layer and the second piezoelectric layer are made of piezoelectric materials; the quantum well layer is located between the first piezoelectric layer and the second piezoelectric layer and comprises two semiconductor sublayers and a graphene nanoribbon located between the two semiconductor sublayers. The graphene quantum well optical detector has the advantages that the optimal bias voltage of a quantum well is used for making the highest energy level in the quantum well aligned with the boundary of a conduction band to form a maximum output light current, and then highest detection sensitivity is achieved; piezoelectric potential is used for adjusting the bias voltage of the quantum well, so that the quantum efficiency of a single quantum well is improved.

A circuit arrangement (1, 1', 1'') for driving a high-pressure gas discharge lamp (2) is described, which has a first terminal (x1) for a first voltage potential, a second terminal (x2) for a second voltage potential, and a third terminal (x4) for applying a third voltage potential for igniting the high-pressure gas discharge lamp (2). Furthermore, the circuit arrangement (1, 1', 1'') has a first electrical connection (5) which at its first end provides a first connection terminal (3) for a high-pressure gas discharge lamp (2) and which is coupled by its second end to the first terminal (x1) for the first voltage potential, a second electrical connection (6) which at its first end provides a second connection terminal (4) for a high-pressure gas discharge lamp (2) and which is coupled by its second end to the second terminal (x2) for the second voltage potential, and an ignition device (8) which at its input side is connected at least to the third terminal (x4) and is coupled at its output side to one of the connection terminals (3) for the high-pressure gas discharge lamp (2). Moreover, the circuit arrangement ( 1, 1', 1'') has a first inductor (L1) arranged in the first electrical connection (5), as well as a second inductor (L2) arranged in the second electrical connection (6), which inductors together form a current-compensated choke (L1, 2) through magnetic coupling, and a resistor (R1) of more than 10 O arranged in a third electrical connection (7) between the ignition device (8) and the third terminal (x4).

The invention discloses a high-frequency high-voltage potential field kinetic energy sterilization and virus killing device and a combined device thereof. Comprising an adapter, an ion module connected with the positive output end of the adapter, a loop electrode plate connected with the negative output end of the adapter, a positive electrode plate connected with the positive output end of the ion module, and an emission needle plate connected with the negative output end of the ion module. The loop electrode plates are respectively and correspondingly arranged between two adjacent positive electrode plates; the ion module is internally provided with a positive and negative high-voltage output circuit so as to control the voltage difference output by the positive and negative output ends of the ion module to be 25-30KV. By means of the mode, the device is energy-saving, efficient, good in safety performance and long in service life, oxygen molecules and microparticles in air carry free electrons through the emission needle plate, when the oxygen molecules and microparticles pass through a high-voltage electric field formed between the positive electrode plate and the loop electrode plate, bacterial colonies and viruses make contact with the electrode plates to generate a microcosmic point-touch lightning effect, and therefore the oxygen molecules and the microparticles can be purified. And the internal structure is instantly damaged, so that rapid inactivation is realized.

A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Processor elements are described herein. A processor element comprises a silicon layer. The processor element further comprises one or more conductive electrodes. The processor element further comprises dielectric material having a non-uniform thickness, the dielectric material disposed at least between the silicon layer and the one or more conductive electrodes. In use, when a bias potential is applied to one or more of the conductive electrodes, the positioning of the one or more conductive electrodes and the non-uniform thickness of the dielectric material together define an electric field profile to induce a quantum dot at an interface between the silicon layer and the dielectric layer. Methods are also described herein.

A converter unit has a main printed circuit board (8) on which at least one functional module (1, 5) is arranged. By means of the functional module (1, 5), at least one alternating voltage (L1, L2, L3, U, V, W) fed to the functional module (1, 5) via a first power supply interface (2, 7) of the functional module (1, 5) can be converted into at least two direct-current piezoelectric potentials (U +, U-, U0) output via a second power supply interface (3, 6) of the functional module (1, 5). The main printed circuit board (8) has conductor tracks (10, 11, 14, 15) via which the control signals (C11 to C46) can be fed to the control interfaces (12, 13, 16, 17). The main printed circuit board (8) has conductor tracks (10, 11, 14, 15) extending from the control unit (9) to the first and second control interfaces (12, 13, 16, 17) of the main printed circuit board (8), and the first and second control signals (C11 to C46) can be fed to the first and second control interfaces (12, 13, 16, 17) via the conductor tracks. The functional module (1, 5) is at least mechanically connected to the main printed circuit board (8) at least in the region of the first and second control interfaces (12, 13, 16, 17). However, the functional module is designed in such a way that it does not use the first control signal (C11 to C16, C31 to C36) and/or the second control signal (C21 to C26, C41 to C46).

The invention discloses a manufacturing method of positive electrode graphene. The manufacturing method comprises the following steps of adding the graphene into a penetrating agent for dispersion, wherein the penetrating agent is a non-ion chelate; adding manganese oxide into the mixture for further dispersion so that the manganese oxide is uniformly dispersed on the graphene and graphene lattices are in full contact with manganese ions; placing the mixed material in full contact with the manganese ions in a reaction kettle for ion permeation reaction; and performing cleaning after the fabrication of the positive electrode graphene is completed through reaction. According to the manufacturing method of the positive electrode graphene, the manganese ions are mainly embedded onto the graphene lattices to be used as a positive electrode of a battery, and the manganese material is low in cost, is easy to obtain, has positive piezoelectric potential characteristic and is an excellent material of the graphene battery positive electrode. By the fabrication method, the function development of the graphene is achieved, and the application range of the graphene is expanded.

The invention belongs to the technical field of nano generators, and discloses a heterojunction direct-current piezoelectric nano generator and a preparation method thereof. In the heterojunction direct-current piezoelectric nano generator, a rectification effect exists between an upper electrode prepared from silicon and a lower electrode with a zinc oxide nanowire array, so that the neutralization of the piezoelectric potential in the interior can be effectively achieved and the piezoelectric potentials are eliminated, when a piezoelectric unit of the upper electrode is in contact with the positive potential region of the zinc oxide nanowire array of the lower electrode, a current can be suppressed, and when the piezoelectric unit of the upper electrode is in contact with the negative potential region of the zinc oxide nanowire array of the lower electrode, the current is released, and macroscopically, a stable one-way direct current is output, so that the concept of the heterojunction direct-current piezoelectric nano-generator is effectively achieved, and a new thought is opened up for integration of the direct-current piezoelectric nano-generator on a silicon substrate.