Heat extraction assembly for a semiconductor power module

Abstract

The invention relates to a heat extraction assembly (20) for a semiconductor power module, comprising three stacked joint partners (24, 26, 28) integrally bonded together by a first solder layer (22A)and by a second solder layer (22B), and a corresponding semiconductor power module comprising at least one of these heat extraction assemblies (20) and a method for bonding a layer stack consisting of three joining partners (24, 26, 28) in such a heat extraction assembly (20). The first solder layer (22A) is formed between a first, electroconducting joining partner (24) and a central, electrically insulating joining partner (26), and the second solder layer (22B) is formed between the central, electrically insulating joining partner (26) and a second, electroconducting joining partner (28), wherein the first joining partner (24) is a first conducting track (24A) from which heat is to be extracted and to which a first voltage potential is applied, the second joining partner (28) is a second conducting track (28A) that acts as a heat sink and to which a second voltage potential different from the first voltage potential is applied, and the central joining partner (26) is an electricallyinsulating intermediate layer (26A) that forms an electrically insulated heat-dissipation path between the first joining partner (24) and the second joining partner (28).

Description

technical field [0001] The invention relates to a heat removal assembly for a semiconductor power module. The subject matter of the invention is also a semiconductor power module with a plurality of semiconductor components and at least one such heat extraction component, as well as a method for connecting a layer stack consisting of three bonding partners of such a heat extraction component method. Background technique [0002] Power electronics for hybrid electric vehicles or electric vehicles including associated semiconductor power modules are increasingly subject to high installation space requirements, so that the semiconductor power modules are designed smaller together with the electrical leads. At the same time, the current density increases due to the increased power requirement. However, smaller leads and higher currents result in higher electrical losses (in ohmic resistance and as a function of frequency), thereby heating the leads, and have certain limitation...

AI Technical Summary

Problems solved by technology

As a result, volumetric shrinkage during welding leads to a reduction in the area of ​​the welded connection and / or to the formation of shrinkage cavities

This can lead to increased electrical and thermal resistance, resulting in reduced functionality and even reduced lifetime

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