Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same

A technology for measuring parameters and process conditions, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, printed circuits, etc., and can solve problems such as unbearable

Pending Publication Date: 2021-04-20
KLA TENCOR TECH CORP
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional process condition measurement wafers are often subject to temperature inaccuracies attributable to internal structural variations and may not be able to withstand the energy throughput of current and future processing systems (e.g., epitaxy chambers, plasma etch chambers)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
  • Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
  • Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Reference will now be made in detail to the disclosed objects illustrated in the accompanying drawings.

[0024] generally refer to Figures 1A to 5 , shows and describes a system and method for process condition measurement wafer assembly according to one or more embodiments of the present invention.

[0025] Conventional Process Conditions Measurement wafers contain measurement electronics disposed between silicon wafers. The silicon wafer is designed to shield the measurement electronics from the extreme conditions within the process chamber (eg, high RF, high heat flux, high electromagnetic radiation). Silicon wafers within these conventional process condition measurement wafers are typically coupled via one or more discrete ohmic contacts between respective silicon wafers. However, these ohmic contacts result in high current densities in and around the contacts, and possibly high potentials across the process conditions of the measured wafer. In addition, conven...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Description

[0001] Cross References to Related Applications [0002] This application filed September 6, 2018 pursuant to 35 U.S.C. § 119(e), designates Farhat A. Quli, Andrew Nguyen, and James Richard De Bella (James Richard Bella) is the inventor of the article titled "Process Temperature Measurement Device Manufacturing Technology and Its Calibration and Data Interpolation Method (PROCESS TEMPERATURE MEASUREMENT DEVICE FABRICATION TECHNIQUES AND METHODS OFCALIBRATION AND DATA INTERPOLATION OF THE SAME)" Priority to U.S. Provisional Patent Application No. 62 / 727,633, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates generally to monitoring wafers along a semiconductor process line, and in particular, to a system and method for process condition measurement of wafer assemblies. Background technique [0004] As the tolerances for process conditions in semiconductor device processing environments continue to shrink, the ne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L23/12
CPCH01L21/67248H01L22/12H01L22/30H01L23/12H01L21/67253H05K2201/10151H05K1/181H05K1/023
Inventor F·A·库利A·恩古叶J·R·拜洛
Owner KLA TENCOR TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com