Transistor and transistor array

Abstract

The invention provides a transistor which comprises a piezoelectric crystal, a first electrode and a second electrode. The first electrode and the second electrode are oppositely arranged at the two ends of the piezoelectric crystal respectively. The first electrode and / or the second electrode are / is used for exerting strain or stress on the piezoelectric crystal. Materials of the piezoelectric crystal have the piezoelectric effect under the action of the strain or the stress. Correspondingly, the invention further provides a transistor array. Strain or stress or pressure is exerted on the electrode of one end of the piezoelectric crystal, so that the piezoelectric crystal correspondingly deforms, the interface barrier between the piezoelectric crystal materials and electrode materials can be effectively regulated by generated piezoelectric potential, and the function similar to grid voltage in a field effect transistor is achieved. The transistor or the transistor array can be applied to the fields of micro-nano electromechanical systems, nano-robots, human-computer interaction interfaces, flexible sensors and the like.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a transistor and a transistor array applied in the fields of micro-nano electromechanical systems, nano-robots, human-computer interaction interfaces, bendable sensors, and the like. Background technique [0002] Among the traditional electronic devices based on semiconductor nanowires, the single-channel field-effect transistor (FET) is the most researched, and its structure is shown in figure 1 , wherein the source 1 and the drain 2 are located at both ends of the nanowire, and the gate 3 wound around the nanowire applies a voltage to the nanowire channel. Apply an external voltage V between source 1 and drain 2 DS , the carrier transport process in semiconductor devices is regulated or triggered by the gate voltage. Although this single-channel field-effect transistor based on semiconductor nanowires uses the semiconductor nanowires to control the carrier transport proce...

AI Technical Summary

Problems solved by technology

Although this single-channel field-effect transistor based on semiconductor nanowires uses the semiconductor nanowires to control the carrier transport process in the device, it still needs Applied voltage

Therefore, the structure of the existing single-channel field-effect transistor based on semiconductor nanowires is relatively complicated, and when used in the field of integrated circuits such as touch panels, its design and manufacture are difficult or impossible.

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