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Transistors and magnetic sensors based on magnetostrictive potential

A ferroelectric transistor and transistor technology, which is applied in the field of magnetic sensors, can solve the problems of low sensitivity and high price of magnetic sensors, and achieve the effects of convenient mass production, low cost and simple preparation.

Active Publication Date: 2019-01-18
BEIJING INST OF NANOENERGY & NANOSYST
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Problems solved by technology

However, magnetic sensors based on single-phase materials are often not very sensitive, generally require amplifiers, and are expensive

Method used

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  • Transistors and magnetic sensors based on magnetostrictive potential
  • Transistors and magnetic sensors based on magnetostrictive potential
  • Transistors and magnetic sensors based on magnetostrictive potential

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Embodiment Construction

[0023] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0024] In the present invention, the used orientation words such as "up and down" refer to the directions in the drawings unless stated otherwise.

[0025] Based on the magneto-induced piezopotential transistor provided by the present invention, the typical structure can be found in figure 1 , including a substrate 1 and a ferroelectric transistor 2 disposed on the substrate 1, wherein the substrate 1 is made of a magnetostrictive material. The ferroelectric transistor 2 includes a piezoelectric layer, and the magnetostrictive substrate generates strain under the action of a magnetic field, so that the piezoelectric layer generates a piezoelectric potential and...

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Abstract

A transistors based on magnetostrictive potential includes a substrate made of a magnetostrictive material and a ferroelectric transistor disposed on that substrate, and a piezoelectric lay included in the ferroelectric transistor. The transistor of the invention is mainly composed of three different functional materials, namely, magnetostrictive layer base material, piezoelectric layer material and semiconductor layer material, and is vertically stacked. The magnetopiezoelectric transistor according to the invention can also be used as a magnetic sensor. When the sensor is placed in a magnetic field, the magnetostrictive material generates strain and transmits the strain to the piezoelectric material in the ferroelectric transistor, so that the piezoelectric material generates piezoelectric potential; As that gate voltage, the piezoelectric potential can be use to adjust the carrier concentration in the semiconductor so as to change the resistance in the semiconductor. If a voltage isapply to both the source and drain terminals of the semiconductor, the current will be changed after a magnetic field is apply. The piezoelectric potential can be used as a gate voltage to adjust thecarrier concentration in the semiconductor so as to change the resistance in the semiconductor.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a transistor based on magneto-induced piezoelectric potential and a magnetic sensor using the transistor. Background technique [0002] A magnetic sensor is a device that converts changes in the magnetic properties of sensitive components caused by external factors such as magnetic field, current, stress and strain, temperature, and light into electrical signals, and detects corresponding physical quantities in this way. Huge application requirements, a spacecraft needs more than a thousand magnetic sensors, and the global annual demand for magnetic sensors is in the billions. According to the development of technological progress, commercial magnetic sensors are mainly divided into four categories: Hall Effect (Hall Effect) sensors, anisotropic magnetoresistance (AMR) sensors, giant magnetoresistance (GMR) sensors and tunneling magnetoresistance (TMR) sensors. )sensor. The...

Claims

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Application Information

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IPC IPC(8): H01L29/78G01R33/09
CPCG01R33/095H01L29/78391
Inventor 翟俊宜刘玉东
Owner BEIJING INST OF NANOENERGY & NANOSYST
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