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Resistive memory device and memory apparatus and data processing system having the same

A technology of resistive storage and memory unit, which is applied in static memory, read-only memory, information storage, etc., and can solve problems such as high power consumption

Inactive Publication Date: 2014-04-09
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, typical transition metal oxides lead to high power dissipation due to high driving voltage and current

Method used

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  • Resistive memory device and memory apparatus and data processing system having the same
  • Resistive memory device and memory apparatus and data processing system having the same
  • Resistive memory device and memory apparatus and data processing system having the same

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Embodiment Construction

[0042] Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings.

[0043] Exemplary embodiments are described herein with reference to cross-sectional views, which are schematic illustrations of exemplary embodiments (and intermediate structures). As such, it can be expected that the illustrated shape change is the result of, for example, manufacturing technology and / or tolerances. Thus, the exemplary embodiments should not be interpreted as being limited to the specific shape of the area described herein, but may include, for example, shape deviations due to manufacturing. In the drawings, the length and size of layers and regions may be exaggerated for clarity. The same reference numerals denote the same elements in the drawings. It is also understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present.

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Abstract

A resistive memory device includes a first electrode layer, a second electrode layer, and a first variable resistive layer and a second variable resistive layer stacked at least once between the first electrode layer and the second electrode layer. The first variable resistive material layer may include a metal nitride layer having a resistivity higher than that of the first electrode layer or the second electrode layer and less than or equal to that of an insulating material.

Description

[0001] Cross references to related applications [0002] This application claims priority for the Korean patent application with the application number 10-2012-0111184 filed with the Korean Patent Office on October 8, 2012, the entire content of which is incorporated herein by reference. Technical field [0003] The present invention relates to a semiconductor integrated device, and more specifically, to a resistive memory device, a storage device, and a data processing system including the storage device. Background technique [0004] Flash memory devices, which represent non-volatile memory devices, have gradually become more integrated. Recently, high integration technology below 20nm is required. Since the flash memory device operates at a low voltage for low power consumption, the flash memory device encounters physical and electrical limitations due to insufficient current margin. Therefore, research on nonvolatile memory devices that can replace such flash memory devices ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C16/02H10B69/00
CPCH01L45/146H01L45/04H01L45/1616H01L45/1233H01L45/145H10N70/20H10N70/883H10N70/023H10N70/8833H10N70/826G11C11/15
Inventor 朴祐莹李起正金范庸
Owner SK HYNIX INC