Transverse power device with super junction structure and manufacturing method thereof

Abstract

The invention provides a transverse power device with a super junction structure and a manufacturing method thereof. The transverse power device with the super junction structure comprises a support substrate, a germanium silicon layer, an insulating buried layer and an active layer, wherein the germanium silicon layer is positioned on the surface of the support substrate, the insulating buried layer is positioned on the surface of the germanium silicon layer, the active layer is positioned on the surface of the insulating buried layer and comprises a grid region, a source region, a drain region and a drift region, the source region and the drain region are respectively positioned at two sides of the grid region, and the drift region is positioned between the grid region and the drain region and comprises a plurality of doped regions with a first conduction type and a plurality of doped regions with a second conduction type, which are arranged in a transverse alternate contact mode. The transverse power device and the manufacturing method have the advantages that through the existence of the germanium silicon layer arranged under the insulating buried layer, the auxiliary depletion effect of the substrate can be greatly inhibited, and the advanced breakdown caused by the charge unbalance of the shift region is avoided.

Description

technical field [0001] The invention relates to a lateral power device with a super-junction structure and a manufacturing method, in particular to a super-junction lateral power device and a manufacturing method that suppresses the substrate-assisted depletion effect, and belongs to the technical field of microelectronics and solid electronics. Background technique [0002] Power integrated circuits are sometimes called high-voltage integrated circuits, which are an important branch of modern electronics. They can provide new circuits with high speed, high integration, low power consumption and radiation resistance for various power conversion and energy processing devices, and are widely used in electric power Daily consumption fields such as control systems, automotive electronics, display device drivers, communications and lighting, as well as many important fields such as national defense and aerospace. The rapid expansion of its application scope has also put forward h...

AI Technical Summary

Problems solved by technology

[0006] The disadvantage of the above-mentioned superjunction structure used in lateral devices is that the substrate participates in the depletion of the superjunction column region, which leads to the substrate-assisted depletion effect

Images