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Power semiconductor device

A power semiconductor and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of charge imbalance and lower breakdown voltage of power semiconductor devices, and achieve the effect of avoiding charge imbalance and improving breakdown voltage.

Active Publication Date: 2020-11-24
江苏应能微电子有限公司
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  • Abstract
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Problems solved by technology

[0004] The present invention provides a power semiconductor device, which solves the problem of breakdown voltage reduction caused by charge imbalance of power semiconductor devices in the related art

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Embodiment Construction

[0017] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0018] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments of some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0019] It should be noted that the terms "first" a...

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Abstract

The invention relates to the technical field of integrated circuits, and specifically discloses a power semiconductor device. The power semiconductor device comprises a semiconductor substrate, wherein the semiconductor substrate is divided into an active region and a terminal region; the active region is located in the central region of the semiconductor substrate; the terminal region is locatedon the outer ring of the active region and surrounds the active region; each of the active region and the terminal region comprises annular structures; the curvature radiuses of the annular structuresof the active region are the same; the curvature radiuses of the annular structures of the terminal region are the same; and the curvature radiuses of the annular structures of the terminal region are equal to the curvature radiuses of the annular structures of the active region. The power semiconductor device provided by the invention can effectively improve and control the breakdown voltage.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a power semiconductor device. Background technique [0002] Generally speaking, in the layout of power semiconductor power components, the corner design of the four corners is closely related to the breakdown voltage of the component, especially for super-junction (Super-Junction). There are both P-type doped column and N-type doped column in super junction components. Under the reverse bias condition, maintaining the ideal depletion state and obtaining a higher breakdown voltage (Breakdown) are the key points of the design. . [0003] In terms of breakdown voltage, the design of any power device needs to take into account the two parts of the active area and the terminal area, and the super junction interface is the first to balance the charge, which is even more difficult to design. The bending positions of the four corners Moreover, due to the unsatisfactory desi...

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Application Information

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IPC IPC(8): H01L29/06
CPCH01L29/0634
Inventor 李振道孙明光朱伟东
Owner 江苏应能微电子有限公司
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