imd measurement circuit structure and imd performance test method
A technology for measuring circuits and testing methods, applied in the direction of circuits, testing dielectric strength, electrical components, etc., can solve problems such as low efficiency and complicated testing process, and achieve simplified testing process, simple and efficient testing process, and simplified IMD testing process Effect
Active Publication Date: 2017-03-15
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The whole testing process is complicated and inefficient
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0032] In order to make the purpose, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and examples.
[0033] Such as Figure 4 Shown is a schematic diagram of an embodiment of the structure of the IMD measurement circuit of the present invention, Figure 5 for Figure 4 Stereoscopic view of a localized region in the IMD measurement circuit structure. to combine Figure 4 with Figure 5 As shown, the IMD measurement circuit structure of the present invention is arranged between the first measurement pad 31 and the second measurement pad 32, and the IMD measurement circuit structure includes a metal line layer-to-metal line layer (metal tometal) structure A, a through hole The via end to metal structure B, the upper metal to bottom metal structure C, and the via to via structure D.
[0034] The IMD measurement circuit structure of the present inv...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an IMD measurement circuit structure and an IMD performance test method. The IMD measurement circuit structure is arranged between a first measurement welding pad and a second measurement welding pad. The IMD measurement circuit structure comprises a metal wire layer to metal wire layer structure, a through hole terminal to metal wire layer structure, an upper metal wire layer to lower metal wire layer structure and a through hole to through hole structure. The IMD measurement circuit structure of the invention includes various structures at the same time, so the whole IMD measurement circuit structure have performances reflected by the structures at the same time, so that in the IMD performance tests, by adopting the IMD measurement circuit structure of the invention, the performances of the IMD comprising the various structures can be acquired only by performing the IMD performance test for the IMD measurement circuit structure of the invention for one time. According to the invention, a large number of test structures do not need to be designed any more and multiple tests do not need to be performed any mode, so the IMD test process is greatly simplified to make the test process simple and effective, so that the production cycle of a semiconductor integrated circuit is shortened, and the production cost is reduced.
Description
technical field [0001] The present invention relates to semiconductor manufacturing technology, in particular to an IMD measuring circuit structure and an IMD performance testing method used for performance testing of an IMD (Inter Metal Dielectric, inter-metal dielectric layer) during the manufacturing process of a semiconductor integrated circuit. Background technique [0002] Low-k (low dielectric constant) materials (k<3.0) can produce lower capacitance (C) due to their inherent low dielectric coefficient, so they have been widely used in the field of semiconductor manufacturing, such as filling in Dielectric layer material between metal layers (including interconnects and vias). Therefore, in the BEOL (Back End Of Line, back-end process), the dielectric layer made of Low-k material (such as the dielectric layer between the interconnection line, the dielectric layer between the interconnection line and the through hole, the through hole and the through hole The diele...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544G01R31/12
Inventor 宋卓赵永
Owner SEMICON MFG INT (SHANGHAI) CORP