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Optical semiconductor element, its control method and its manufacturing method

A technology of optical semiconductor components and control methods, applied in optical components, light guides, optics, etc., can solve problems such as difficulty in achieving stable control, compromise between wavelength bandwidth and modulation efficiency, and narrowing of wavelength bandwidth.

Inactive Publication Date: 2017-03-08
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in ring modulators, wavelength bandwidth and modulation efficiency are in a trade-off relationship
Therefore, in order to obtain high modulation efficiency, the wavelength bandwidth is narrowed, making it difficult to match the wavelength of incident light such as CW (continuous wave: continuous wave) light with the resonance wavelength
Although technologies aimed at solving such technical problems have been proposed, it is difficult to achieve stable control

Method used

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  • Optical semiconductor element, its control method and its manufacturing method
  • Optical semiconductor element, its control method and its manufacturing method
  • Optical semiconductor element, its control method and its manufacturing method

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no. 1 Embodiment approach ）

[0063] First, the first embodiment will be described. Figure 1A is a diagram showing an example of a ring modulator. This ring modulator includes two linear waveguides 1 and 2 and a ring waveguide 3 provided therebetween. In addition, the modulation electrode 4 is provided outside the ring waveguide 3 , and the modulation electrode 5 is provided inside the ring waveguide 3 .

[0064] Furthermore, when the CW light incident on the input port 6 of the waveguide 1 coincides with the wavelength of the CW light at the ring resonance wavelength (an integer fraction of the optical path length of the circular waveguide 3) determined by the optical path length of the optical revolution of the ring waveguide 3, is introduced into the output port 8 of the waveguide 2 . On the other hand, when the ring resonance wavelength does not match the wavelength of the CW light, it is introduced into the output port 7 of the waveguide 1 . In addition, when the modulation voltage V applied to the...

no. 2 Embodiment approach ）

[0075] Next, a second embodiment will be described. Figure 10A is a diagram showing the layout of the optical semiconductor element according to the second embodiment, Figure 10B is along Figure 10A A cross-sectional view of the line I-II, Figure 10C is along Figure 10A Sectional view of line III-II.

[0076] In the second embodiment, if Figure 10B as well as Figure 10C As shown, SiO is formed on the Si substrate 101 2 Film 102. And, if Figure 10A ~ Figure 10C shown in SiO 2 On membrane 102, the annular n ＋ layer 105n, n - layer 104n, p - Layer 104p and p ＋ The layers 105p are arranged in this order from the inner side and formed. in n ＋ layer 105n, n - layer 104n,p - Layer 104p and p ＋ The layer 105p uses, for example, Si doped with impurities. Additionally, covering n ＋ layer 105n, n - layer 104n, p - Layer 104p and p ＋ SiO of layer 105p 2 film 106 formed on SiO 2 film 102, the SiO 2 film 106 and n - layer 104n and p - A ring-shaped heater 10...

no. 3 Embodiment approach ）

[0084] Next, a third embodiment will be described. Figure 11A is a diagram showing the layout of the optical semiconductor element according to the third embodiment, Figure 11B is along Figure 11A A cross-sectional view of the line I-II, Figure 11C is along Figure 11A Sectional view of line III-II.

[0085] In the third embodiment, if Figure 11A ~ Figure 11C shown, in n ＋ The inner side of the layer 105n is provided with a ring-shaped light absorbing material 114b, and the inner side is also provided with a groove 115. Other configurations are the same as those of the second embodiment.

[0086] In such a third embodiment, absorption of light 131 and heat generation 132 also occur in the light-absorbing material 114b. Therefore, heat can be used more efficiently than in the second embodiment.

[0087] In addition, if the light-absorbing material 114b is provided, the light-absorbing material 114a may not be provided.

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Abstract

An optical semiconductor element includes a ring modulator, and a light absorbing material provided at a position apart from a path for a modulated light which is guided by the ring modulator, the light absorbing material absorbing a light leaked out of a ring waveguide of the ring modulator, and increasing a temperature of the ring waveguide.

Description

technical field [0001] The present invention relates to an optical semiconductor element, its control method, and its manufacturing method. Background technique [0002] In order to realize downsizing, large-capacity and low power consumption of optical transceivers, it is important to put into practical use optical devices that use silicon as a material for optical waveguides. This is because it is advantageous for miniaturization compared with other materials because the optical waveguide path with a large difference in refractive index can be used, and because it is easy to integrate with electronic circuits, it is possible to integrate multiple optical transmitters and receivers in one chip. . In optical devices, especially modulators, this feature has a great influence on the power consumption and size of optical transceivers. Therefore, among the modulators, especially the ring modulator, since the element itself is small, the modulation voltage is small, and the opt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/01
CPCG02F1/015G02B6/29338G02B6/29341G02F1/0121G02F1/0147G02F1/2257G02F1/3133G02F2201/08
Inventor 秋山知之
Owner FUJITSU LTD
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