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Atomic layer deposition device

A technology of atomic layer deposition and exhaust pipe, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of atomic layer deposition device becoming larger and difficult to maintain the uniformity of gas injection pressure

Inactive Publication Date: 2014-06-18
LIGADP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reason for this is that the atomic layer deposition apparatus becomes larger in order to process large substrates, making it difficult to maintain the uniformity of the gas injection pressure throughout the apparatus

Method used

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  • Atomic layer deposition device
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Embodiment Construction

[0044] Embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is not limited or limited to the Examples. The same reference numerals shown in the respective drawings denote the same components.

[0045] figure 1 is a diagram schematically showing an atomic layer deposition apparatus according to an embodiment of the present invention, figure 2 yes means figure 1 A perspective view of the interior of an atomic layer deposition apparatus, image 3 is for figure 1 A perspective view of the gas extraction unit of the atomic layer deposition device, Figure 4 Yes image 3 Transverse and longitudinal cross-sectional views of the gas suction and discharge unit, Figure 5 yes means figure 1 A perspective view of the gas suction unit of the atomic layer deposition device and the gas injection pressure adjustment unit connected to the gas suction unit, Image 6 Yes Figure 5 The cross-sectional vie...

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Abstract

An atomic layer deposition device of the invention comprises suction and discharge gas units and gas injection pressure adjusting units; the suction and discharge gas units are equipped with gas supply pipes in which gas supply flow channels are formed, gas discharge pipes in which pressure relieving parts communicated with the gas supply flow channels are formed, and gas suction pipes which surround at least parts of outer peripheral surfaces of the gas discharge pipes to form gas suction flow channels in the gas suction pipes; and the gas injection pressure adjusting units are connected to the gas supply flow channels or the pressure relieving parts to supply a gas, and enable injection pressures of a gas discharged from the gas discharge pipes are the same on the whole length of the gas discharge pipes.

Description

technical field [0001] The present invention relates to an atomic layer deposition device, and more particularly to an atomic layer deposition device capable of spraying to a substrate with uniform pressure. Background technique [0002] In general, the manufacture of semiconductor elements or flat panel display devices requires various manufacturing processes, among which thin film deposition on substrates such as wafers or glass is a necessary process. [0003] In this thin film deposition process, methods such as sputtering (Sputtering), chemical vapor deposition (CVD: Chemical Vapor Deposition), and atomic layer deposition (ALD: Atomic Layer Deposition) are mainly used. [0004] Among them, the atomic layer deposition (Atomic Layer Deposition) method is a nano-scale film deposition technology that uses chemical adsorption and detachment of a single atomic layer. It separates the reactants and supplies them to the chamber in pulse form, and uses the surface of the reactan...

Claims

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Application Information

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IPC IPC(8): C23C16/455
CPCC23C16/45551C23C16/45561C23C16/45544H01L21/0262
Inventor 全蓥卓崔鹤永
Owner LIGADP
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