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Power semiconductor device

A power semiconductor and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as increasing connection loss and shrinking contact area.

Inactive Publication Date: 2014-06-18
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this case, the contact area between the emitter electrode and the N+ emitter region is reduced to suddenly increase the connection loss

Method used

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Embodiment Construction

[0034] The objects, features and advantages of the present invention will be more clearly understood from the following detailed description of preferred embodiments in conjunction with the accompanying drawings. Throughout the drawings, the same reference numerals are used to designate the same or similar components, and redundant descriptions thereof are omitted. Also, in the following description, the terms "first", "second", "one side", "the other side", etc. are used to distinguish some components from other components, and the configuration of these components should not be construed as interpreted as being limited by these terms. Also, in the description of the present invention, when it is determined that a detailed description of related art will obscure the gist of the present invention, its description will be omitted.

[0035] Hereinafter, preferred embodiments of the present invention will be described in detail by referring to the accompanying drawings.

[0036...

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Abstract

Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in the trench, a second conductive type of second electrode region formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, a first conductive type of second electrode region formed to contact a side surface of the second conductive type of second electrode region, and a second electrode formed on the well layer and electrically connected to the second conductive type of second electrode region and the first conductive type of second electrode region.

Description

[0001] Cross References to Related Applications [0002] This application claims Korean Patent Application No. 10-2012-0142172, filed on Dec. 7, 2012, entitled "Power Semiconductor Device," the entire contents of which application are hereby incorporated by reference. technical field [0003] The invention relates to power semiconductor devices. Background technique [0004] An insulated gate bipolar transistor (IGBT) has high input impedance of a field effect transistor and high power driving performance of a bipolar transistor, and thus is mainly used as a power switching device. [0005] The IGBT is roughly divided into a planar gate type IGBT and a trench type IGBT. Recently, trench IGBTs with reduced size but still increased current density have been developed and investigated. [0006] The short-circuit strength property of the trench IGBT is a very important factor, so it has been developed through many technological developments so far. [0007] In this case, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/08H01L29/417
CPCH01L29/7397H01L29/41741H01L29/1095H01L29/66348
Inventor 严基宙宋寅赫张昌洙朴在勋徐东秀
Owner SAMSUNG ELECTRO MECHANICS CO LTD