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Semiconductor device and method of manufacturing the same

A technology of semiconductor and substrate, applied in the field of semiconductor device and its preparation

Inactive Publication Date: 2014-06-18
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional power semiconductor devices such as bipolar transistors, high-power metal-oxide-semiconductor field-effect transistors (MOSFETs), etc. are difficult to meet this demand

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

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Embodiment Construction

[0040] The objects, features and advantages of the present invention can be more clearly understood from the following detailed description of preferred embodiments in conjunction with the accompanying drawings. Throughout the drawings, the same reference numerals are used to designate the same or similar components, and redundant descriptions are omitted. Also, in the following description, terms such as "first", "second", "one side", "another side" are used to distinguish a specific element from other elements, but the configuration of the element Do not be bound by the limitations of said terms. Also, in the description of the present invention, when it is determined that a detailed description of a related field will make the gist of the present invention unclear, the description thereof is omitted.

[0041] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

[0042] Semiconductor de...

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Abstract

Disclosed herein is a semiconductor device including a semiconductor substrate, a collector layer formed under the semiconductor substrate, a base layer formed on the semiconductor substrate, an emitter layer formed on the base layer, one or more trench barriers vertically penetrating the base layer and the emitter layer, a first gate insulating layer formed on the trench barriers and the emitter layer such that an upper portion of the emitter layer is partially exposed, a gate formed on the first gate insulating layer, a second gate insulating layer formed to cover the gate, and an emitter metal layer formed on an upper portion of the emitter layer exposed by the first gate insulating layer.

Description

[0001] Cross References to Related Applications [0002] This application claims Korean Patent Application No. 10-2012-0145301 filed on December 13, 2012 and entitled "Semiconductor Device and Method of Manufacturing the Same" and April 16, 2013 Priority of Korean Patent Application No. 10-2013-0041599 filed entitled "Semiconductor Device and Method of Manufacturing the Same", the entire contents of which are incorporated into this application for refer to. technical field [0003] The present invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0004] The demand for small power transmission devices such as frequency converters for robots, air conditioners, machine tools, etc., or for industrial electronics represented by uninterrupted power equipment is growing rapidly. Due to the wide range of applications of power transfer devices, compact, light-weight, high-efficiency and low-noise power transfer devices have attracted...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7397H01L29/66348H01L29/42368H01L29/6634H01L29/7396H01L29/0653
Inventor 朴在勋宋寅赫徐东秀金洸洙严基宙
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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