Metal-organic coordination polymer film, thermoelectric device and preparation method thereof
A technology of thermoelectric devices and thin films, which is applied in the manufacture/processing of thermoelectric devices, materials for lead-out wires of thermoelectric devices, etc., to achieve the effect of simple process and easy preparation
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Embodiment 1
[0037] Embodiment 1, the preparation of the CuTCNQ thin film that arranges nanorod array neatly in large area
[0038] Cut a 2mm×5mm piece of Corning glass, wash and dry it with hydrogen peroxide:concentrated sulfuric acid (volume ratio 1:2), deionized water, ethanol, and acetone, and then coat the surface with speed at 7×10 -6Copper films with a thickness of 10nm, 20nm, 30nm, and 40nm were evaporated under Torr's vacuum; the glass sheet with copper film on the surface was transferred to a tube furnace, fixed on the inner wall of the quartz tube, and the surface of the copper film was Place about 200mg of 7,7,8,8-tetracyano-p-dimethylbenzoquinone crystals facing down, right under the copper film, and heat at a constant temperature at 140°C for 2 hours in an argon atmosphere to make 7,7,8, The 8-tetracyano-p-dimethylbenzoquinone vapor undergoes a spontaneous oxidation-reduction reaction with the copper film directly above, and a well-arranged CuTCNQ nanorod array film can be ...
Embodiment 2
[0043] Embodiment 2, preparation of Au / Cu / CuTCNQ / Au thermoelectric device
[0044] Take a 1cm×1cm Corning glass piece, wash and dry it with hydrogen peroxide:concentrated sulfuric acid (volume ratio 1:2), deionized water, ethanol, and acetone respectively, add a mask on the surface of the cleaned glass piece, and evaporate gold electrode, the thickness of the gold electrode is 50nm, and the vacuum evaporation pressure is 7×10 -6 Torr with a speed of After evaporation, cover both ends of the gold electrode with aluminum foil, and use a mask to evaporate a layer of copper film on the top of the gold electrode. The thickness of the copper film is 40nm, and the vacuum evaporation pressure is 7×10 -6 Torr with a speed of
[0045] Then follow the same steps as in Example 1 to prepare a neatly arranged CuTCNQ nanorod array film on its surface. At the same time, pre-deposit a layer of gold film with a thickness of about 100nm on the clean silicon wafer, draw a small part of the ...
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Abstract
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