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Reprogrammable device, method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as limited application

Active Publication Date: 2017-09-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

[0005] In the prior art, the change of fuse and anti-fuse is irreversible, and the E-fuse only has the ability to change from low resistance to high resistance, and the anti-fuse only has the ability to change from high resistance to low resistance. The ability, that is, both have the ability to be programmed only once, and the application is limited

Method used

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  • Reprogrammable device, method for manufacturing semiconductor device
  • Reprogrammable device, method for manufacturing semiconductor device
  • Reprogrammable device, method for manufacturing semiconductor device

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Embodiment Construction

[0042] The technical solution of the present invention provides a multi-time programmable device, which is mainly composed of fuses and antifuses connected in parallel. Specifically, the fuse includes an anode and a cathode, and a fuse part located between the anode and the cathode, and when a large current passes through the fuse part, the fuse part will be blown. The antifuse includes two electrodes, and a dielectric layer between the two electrodes. When a voltage is applied to the two poles of the antifuse, positive and negative charges will be accumulated on the two electrodes respectively, when the positive and negative charges on the two poles accumulate to the breakdown charge Q bd , so that when the voltage between the two poles is large enough, there is a current path at a certain point in the dielectric layer, so that the current increases instantaneously and the resistance drops, that is, the dielectric layer is broken down, so that the antifuse is guided Pass. T...

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Abstract

A manufacturing method of a multi-time programmable device and a semiconductor device containing the multi-time programmable device, the multi-time programmable device includes: a fuse and an anti-fuse, and the fuse and the anti-fuse are connected in parallel. The multi-programmable device composed of parallel fuses and anti-fuses will experience a state change from low resistance to high resistance and then to low resistance under the condition of voltage, and has the ability to provide a multi-programmable circuit. Designers select applications based on their needs.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a multi-time programmable device and a manufacturing method of a semiconductor device including the multi-time programmable device. Background technique [0002] In the field of integrated circuits, fuses (Fuse) refer to some fuseable connection lines formed in integrated circuits. Initially, fuses are used to connect redundant circuits in integrated circuits. Once the integrated circuits are found to be defective, the fuses are used to repair or replace the defective circuits. The fuse is generally divided into two types: Laser Fuse and Electrically Programmable Fuse (hereinafter referred to as E-fuse). With the development of semiconductor technology, E-fuse has gradually replaced laser fuse. [0003] Generally, E-fuse can be made of metal (aluminum, copper, etc.) or silicon, and it usually includes an anode and a cathode, and a thin strip-shaped fuse located betwee...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8246H01L23/525H01L21/768
Inventor 廖淼
Owner SEMICON MFG INT (SHANGHAI) CORP
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